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Contents

README

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DMN3730U-7

Diodes Incorporated · MOSFETs · SOT-23

DMN3730U-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD protected to 2kV via an internal gate protection diode, with VGS(TH) of 0.45V to 0.95V at ID = 250μA and a maximum VGSS of ±8V.
2 S passive Source terminal of the N-channel MOSFET, connected to the body diode, with continuous drain current up to 0.94A at TA = +25°C.
3 D passive Drain terminal of the N-channel MOSFET, rated for a maximum drain-source voltage VDSS of 30V and pulsed drain current IDM of 10A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 10μA 4
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 4
Gate-Source Leakage IGSS 3 μA VGS = ±8V, VDS = 0V 4
Gate Threshold Voltage VGS(TH) 0.45 0.95 V VDS = VGS, ID = 250μA 4
Static Drain-Source On-Resistance RDS(ON) 460 mΩ VGS = 4.5V, ID = 200mA 4
Static Drain-Source On-Resistance RDS(ON) 560 mΩ VGS = 2.5V, ID = 100mA 4
Static Drain-Source On-Resistance RDS(ON) 730 mΩ VGS = 1.8V, ID = 75mA 4
Forward Transfer Admittance /Yfs/ 40 mS VDS = 3V, ID = 10mA 4
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 300mA 4
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -8 8 V 2
Continuous Drain Current (steady state) ID 0.94 A TA = +25°C (Note 6) 2
Continuous Drain Current (steady state) ID 0.68 A TA = +85°C (Note 6) 2
Continuous Drain Current (steady state) ID 0.75 A TA = +25°C (Note 5) 2
Pulsed Drain Current IDM 10 A Note 7, 10μs pulse duty cycle = 1% 2
Power Dissipation PD 0.45 W Note 5 2
Power Dissipation PD 0.71 W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 275 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 177 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMN3730U-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn3730u-7-etched.step / dmn3730u-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3730u-7.step / dmn3730u-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 a8cdb447692a567e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF