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Contents

README

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IRF7303TR

UMW · MOSFETs · SOP-8

IRF7303TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1, which carries the continuous source current with an integral body diode rated IS 2.5 A.
2 G1 input Gate of MOSFET 1; gate-to-source voltage is limited to ±20 V.
3 S2 passive Source terminal of MOSFET 2, which carries the continuous source current with an integral body diode rated IS 2.5 A.
4 G2 input Gate of MOSFET 2; gate-to-source voltage is limited to ±20 V.
5 D1 passive Drain of MOSFET 1 or 2 with drain-source voltage rated 30 V and continuous drain current ID 5.3 A at TA=25°C.
6 D1 passive Drain of MOSFET 1 or 2 with drain-source voltage rated 30 V and continuous drain current ID 5.3 A at TA=25°C.
7 D2 passive Drain of MOSFET 1 or 2 with drain-source voltage rated 30 V and continuous drain current ID 5.3 A at TA=25°C.
8 D2 passive Drain of MOSFET 1 or 2 with drain-source voltage rated 30 V and continuous drain current ID 5.3 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/TJ 0.032 V/°C ID=1mA,Reference to 25°C 3
Gate Threshold Voltage VGS(th) 1 V VDS=VGS, ID=250μA 3
Forward Transconductance gFS 5.2 S VDS=15V, ID=2.4A 3
Static Drain-to-Source On-Resistance RDS(ON) 50 mΩ VGS=10V, ID=2.4A 3
Static Drain-to-Source On-Resistance RDS(ON) 80 mΩ VGS=4.5V, ID=2A 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 25 µA VDS=24V,VGS=0V,TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Gate-to-Source Voltage VGS -20 20 V 2
Peak Diode Recovery dv/dt dv/dt 5 V/nS 2
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
10 Sec. Pulsed Drain Current ID 5.3 A 10 Sec. Pulsed Drain Current, VGS=10V 1
Continuous Drain Current ID 4.9 A Continuous Drain Current, VGS=10V, TA=25°C 1
Continuous Drain Current ID 3.9 A Continuous Drain Current, VGS=10V, TA=70°C 1
Pulsed Drain Current IDM 20 A TA=25°C 1
Power Dissipation PD 2 W TA=25°C 1
Linear Derating Factor 0.016 W/°C 1
Maximum Junction-to-Ambient RθJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRF7303TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7303tr-etched.step / irf7303tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7303tr.step / irf7303tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 d7276ac4fd4a6eae, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF