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MPS2222A-TA

Public Made by Adom

by adom

Changjing Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MPS2222A-TA

Changjing · Bipolar Transistors - BJT · TO-92

MPS2222A-TA from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the NPN transistor, with emitter-base voltage rated at 6 V and emitter-base breakdown V(BR)EBO of 6 V minimum at IE=10uA.
2 BASE passive Base terminal of the NPN transistor, with base-emitter saturation voltage VBE(sat) of 1.2 V maximum at IC=500mA and IB=50mA.
3 COLLECTOR passive Collector terminal of the NPN transistor, rated for 75 V collector-base voltage, 40 V collector-emitter voltage, 0.6 A continuous collector current and 625 mW collector power dissipation.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage 75 V 1
Collector-emitter voltage 40 V 1
Emitter-base voltage 6 V 1
Collector current -continuous 0.6 A 1
Collector power dissipation 625 mW 1
Operation junction and storage temperature range TJ, Tstg -55 1
Thermal resistance, junction to ambient 200 /W junction to ambient 1
Collector-base breakdown voltage V(BR)CBO 75 V IC= 10uA , IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 10mA , IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE= 10uA, IC=0 2
Collector cut-off current ICBO 10 nA VCB= 60V, IE=0 2
Emitter cut-off current IEBO 100 nA VEB= 3 V, IC=0 2
DC current gain hFE(1) 100 300 VCE=10V,IC= 150mA 2
DC current gain hFE(2) 40 VCE=10V,IC= 0.1mA 2
DC current gain hFE(3) 42 VCE=10V, IC= 500mA; pulse test 2
Collector-emitter saturation voltage VCE(sat)(1) 0.6 V IC= 500mA, IB=50mA; pulse test 2
Collector-emitter saturation voltage VCE(sat)(2) 0.3 V IC= 150mA, IB=15mA; pulse test 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC= 500mA, IB= 50mA; pulse test 2
Delay time td 10 nS 2
Rise time tr 25 nS VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA 2
Storage time tS 225 nS 2
Fall time tf 60 nS VCC=30V,Ic=150mA,IB1=IB2=15mA 2
Transition frequency fT 300 MHz VCE=20V, IC=20mA, f=100MHz 2

CAD (KiCad official)

  • Symbol: MPS2222A-TA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: mps2222a-ta-etched.step / mps2222a-ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mps2222a-ta.step / mps2222a-ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 783b6c5385a4730a, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF