component
IDW30E65D1
Public Made by Adomby adom
Infineon Technologies Switching Diodes, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIDW30E65D1
Infineon Technologies · Switching Diodes · TO-247-3
IDW30E65D1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | Pin 1 is not connected. |
| 2 | C | passive | Cathode, also connected to the package backside (tab); the diode blocks up to VRRM of 650V. |
| 3 | A | passive | Anode of the diode, rated for 30A continuous forward current at TC=100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 650 | V | 4 | |||
| Diode forward current | IF | 60 | A | TC=25°C | 4 | ||
| Diode forward current | IF | 30 | A | TC=100°C | 4 | ||
| Diode pulsed current | IFpuls | 90 | A | tp limited by Tvj max | 4 | ||
| Diode surge non repetitive forward current | IFSM | 240 | A | TC=25°C, tp=10.0ms, sine halfwave | 4 | ||
| Power dissipation | Ptot | 142 | W | TC=25°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6 mm (0.063 in.) from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 4 | ||
| Diode thermal resistance junction - case | Rth(j-c) | 1.06 | K/W | 4 | |||
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | 4 | |||
| Diode forward voltage | VF | 1.35 | 1.7 | V | IF=30.0A, Tvj=25°C | 4 | |
| Reverse leakage current | IR | 40 | µA | VR=650V, Tvj=25°C | 4 | ||
| Reverse leakage current | IR | 4000 | µA | VR=650V, Tvj=175°C | 4 |
CAD (KiCad official)
- Symbol:
IDW30E65D1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
idw30e65d1-etched.step/idw30e65d1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);idw30e65d1.step/idw30e65d1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
b965006806e2f98a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).