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IRFB38N20DPBF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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IRFB38N20DPBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRFB38N20DPBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±25 V (absolute maximum) per the datasheet.
2 D passive Drain terminal; continuous drain current is rated at 50 A at TC = 25 °C and 166 W maximum power dissipation at TC = 25 °C, with a 200 V drain-source voltage rating.
3 S passive Source terminal; pulsed drain current is rated at 150 A and single pulse avalanche energy at 20 mJ, with operating junction and storage temperature range of -55 to 175 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID 50 A TC = 25 °C (TJ = 175 °C) 1
Pulsed Drain Current IDM 150 A 1
Single Pulse Avalanche Current IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 20 mJ 1
Maximum Power Dissipation PD 166 W TC = 25 °C 1
Maximum Power Dissipation PD 3.12 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W PCB mount 1
Junction-to-Case (Drain) RthJC 0.75 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 200 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 200 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 40 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.048 Ω VGS = 10 V, ID = 3 A 2
Drain-Source On-State Resistance RDS(on) 0.07 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.092 Ω VGS = 6 V, ID = 3 A 2
Source-Drain Pulsed Current ISM 36 A 2
Rise Time tr 50 75 ns VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 60 90 ns VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2
Forward Transconductance gfs 35 S VDS = 15 V, ID = 3 A 2
Output Capacitance Coss 180 pF VGS = 0 V, VDS = 25 V, F = 1 MHz 2
Reverse Transfer Capacitance Crss 80 pF VGS = 0 V, VDS = 25 V, F = 1 MHz 2
Gate-Source Charge Qgs 8 nC VDS = 100 V, VGS = 10 V, ID = 3 A 2
Gate-Drain Charge Qgd 12 nC VDS = 100 V, VGS = 10 V, ID = 3 A 2

CAD (KiCad official)

  • Symbol: IRFB38N20DPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb38n20dpbf-vb-etched.step / irfb38n20dpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb38n20dpbf-vb.step / irfb38n20dpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 9964c14dbcc3b0dd, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF