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Contents

README

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PMV20ENR

Nexperia · MOSFETs · SOT-23

PMV20ENR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage VGS is limited to -20 V to 20 V (Table 5, page 3).
2 S passive Source of the N-channel MOSFET; source current IS is rated at 1.1 A at Tamb = 25 °C (Table 5, page 3).
3 D passive Drain of the N-channel MOSFET; drain-source voltage VDS is limited to 30 V and continuous drain current ID to 7.6 A at t ≤ 5 s (Table 5, page 3).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID 7.6 A VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] 3
Drain current ID 6 A VGS = 10 V; Tamb = 25 °C [1] 3
Drain current ID 3.8 A VGS = 10 V; Tamb = 100 °C [1] 3
Peak drain current IDM 24 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 510 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 1200 mW footnote [1]: FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 3
Total power dissipation Ptot 6940 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 1.1 A Tamb = 25 °C [1] 3
Thermal resistance from junction to ambient Rth(j-a) 208 245 K/W in free air; footnote [1]: FR4 PCB, single-sided copper, tin-plated and standard footprint 5
Thermal resistance from junction to ambient Rth(j-a) 88 104 K/W footnote [2]: FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 5
Thermal resistance from junction to ambient Rth(j-a) 55 65 K/W in free air; t ≤ 5 s [2] 5
Thermal resistance from junction to solder point Rth(j-sp) 13 18 K/W 5
Drain-source breakdown voltage V(BR)DSS 30 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 1 1.5 2 V ID = 250 µA; VDS=VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 30 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 17 21 mΩ VGS = 10 V; ID = 6 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 27 34 mΩ VGS = 10 V; ID = 6 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 21 26 mΩ VGS = 4.5 V; ID = 5.4 A; Tj = 25 °C 6
Total gate charge QG(tot) 7.2 10.8 nC VDS = 15 V; ID = 5 A; VGS = 10 V; Tj = 25 °C 6
Source-drain voltage VSD 0.75 1.2 V IS = 1.1 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV20ENR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv20enr-etched.step / pmv20enr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv20enr.step / pmv20enr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 12234c57070442ce, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF