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10G04S

Public Made by Adom

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HL MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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10G04S

HL · MOSFETs · SOP-8

10G04S from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal S1 per the ordering-table pin assignment; the datasheet gives no separate pin-level limit, so the device ratings apply (VDS 40 V / -40 V, ID 10 A / -10 A at Ta=25°C).
2 G1 input Gate terminal G1 per the ordering-table pin assignment; gate-source voltage is rated ±20 V for both channels.
3 S2 passive Source terminal S2 per the ordering-table pin assignment; the datasheet gives no separate pin-level limit, so the device ratings apply (VDS 40 V / -40 V, ID 10 A / -10 A at Ta=25°C).
4 G2 input Gate terminal G2 per the ordering-table pin assignment; gate-source voltage is rated ±20 V for both channels.
5 D2 passive Drain terminal D2 (pins 5 and 6 are both D2); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C.
6 D2 passive Drain terminal D2 (pins 5 and 6 are both D2); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C.
7 D1 passive Drain terminal D1 (pins 7 and 8 are both D1); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C.
8 D1 passive Drain terminal D1 (pins 7 and 8 are both D1); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C.

Key specifications

Parameter Value
Manufacturer HL
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-channel Drain-Source Voltage VDS 40 V 1
P-channel Drain-Source Voltage VDS -40 V 1
N-channel Gate-Source Voltage VGS -20 20 V 1
P-channel Gate-Source Voltage VGS -20 20 V 1
N-channel Continuous Drain Current ID 10 A Ta= 25℃ 1
P-channel Continuous Drain Current ID -10 A Ta= 25℃ 1
N-channel Continuous Drain Current ID 6.5 A Ta= 100℃ 1
P-channel Continuous Drain Current ID -6.5 A Ta= 100℃ 1
N-channel Pulsed Drain Current IDM 40 A 1
P-channel Pulsed Drain Current IDM -40 A 1
N-channel Single Pulse Avalanche Energy EAS 19 mJ 1
P-channel Single Pulse Avalanche Energy EAS 27.5 mJ 1
N-channel Power Dissipation Pd 3.4 W TC = 25℃ 1
P-channel Power Dissipation Pd 7.5 W TC = 25℃ 1
Junction Temperature TJ -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
N-channel Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS=0V, ID=250μA 2
N-channel Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 2
N-channel Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
N-channel Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
N-channel Static Drain-Source on-Resistance RDS(on) 17 20 mΩ VGS=10V, ID=10A 2
N-channel Static Drain-Source on-Resistance RDS(on) 22 27 mΩ VGS=4.5V, ID=5A 2
N-channel Maximum Continuous Drain to Source Diode Forward Current IS 10 A 2
N-channel Maximum Pulsed Drain to Source Diode Forward Current ISM 40 A 2
N-channel Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= 10A 2
P-channel Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS=0V, ID=250μA 3
P-channel Zero Gate Voltage Drain Current IDSS 1 μA VDS=-40V, VGS=0V 3
P-channel Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
P-channel Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID=-250μA 3
P-channel Static Drain-Source on-Resistance RDS(on) 34 44 mΩ VGS=-10V, ID=-8A 3
P-channel Static Drain-Source on-Resistance RDS(on) 46 62 mΩ VGS=-4.5V, ID=-5A 3
P-channel Maximum Continuous Drain to Source Diode Forward Current IS -10 A 3
P-channel Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 3
P-channel Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS=-10A 3

CAD (KiCad official)

  • Symbol: 10G04S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 10g04s-etched.step / 10g04s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 10g04s.step / 10g04s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (11 pp, sha256 c83bcaee031ef234, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF