component
DON150N03T
Public Made by Adomby adom
DOINGTER MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDON150N03T
DOINGTER · MOSFETs · DFN5x6-8
DON150N03T from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, pins 1-3 are tied together as the MOSFET source (N-channel, VDS 30V, ID 150A). |
| 2 | S | passive | Source terminal, pins 1-3 are tied together as the MOSFET source (N-channel, VDS 30V, ID 150A). |
| 3 | S | passive | Source terminal, pins 1-3 are tied together as the MOSFET source (N-channel, VDS 30V, ID 150A). |
| 4 | G | input | Gate terminal, with gate-source voltage rating of ±20V and threshold of 1.2V min to 2.2V max. |
| 5 | D | passive | Drain terminal, pins 5-8 are tied together with the exposed pad as the drain (VDS 30V max). |
| 6 | D | passive | Drain terminal, pins 5-8 are tied together with the exposed pad as the drain (VDS 30V max). |
| 7 | D | passive | Drain terminal, pins 5-8 are tied together with the exposed pad as the drain (VDS 30V max). |
| 8 | D | passive | Drain terminal, pins 5-8 are tied together with the exposed pad as the drain (VDS 30V max). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 150 | A | 1 | |||
| Pulsed Drain Current | IDM | 600 | A | 1 | |||
| Power Dissipation | PD | 89 | W | 1 | |||
| Single pulse avalanche energy | EAS | 225 | mJ | TJ=25℃, VDD=20V, VG=10V, L=0.5mH (note 3) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.4 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=30V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 1.75 | 2.2 | mΩ | VGS=10V,ID=20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 2.5 | 3.2 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=30A | 2 | ||
| Continuous Drain Current (body diode) | IS | 150 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (body diode) | ISM | 600 | A | 2 |
CAD (KiCad official)
- Symbol:
DON150N03T - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
don150n03t-etched.step/don150n03t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);don150n03t.step/don150n03t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (8 pp, sha256
79de0c6b65686f8d, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).