Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Download PDF

Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

STPS61L45CT

STMicroelectronics · Schottky Diodes · TO-220AB-3

STPS61L45CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	A1	passive	Anode of diode 1 of the dual center-tap Schottky rectifier, rated 30 A average forward current per diode and VRRM 45 V.
2	K	passive	Common cathode of both diodes, also connected to the metal tab, with VRRM 45 V and 60 A total average forward current per device.
3	A2	passive	Anode of diode 2 of the dual center-tap Schottky rectifier, rated 30 A average forward current per diode and VRRM 45 V.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-220AB-3
Category	Diodes
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Repetitive peak reverse voltage	VRRM			45	V		2
Forward rms current	IF(RMS)			60	A		2
Average forward current	IF(AV)			30	A	Per diode; δ = 0.5; Tc = 120 °C	2
Average forward current	IF(AV)			60	A	Per device; Tc = 115 °C	2
Surge non repetitive forward current	IFSM			500	A	tp = 10 ms sinusoidal	2
Repetitive peak avalanche power	PARM			10000	W	tp = 1 µs; Tj = 25 °C	2
Storage temperature range	Tstg	-65		175	°C		2
Maximum operating junction temperature	Tj			150	°C	Condition to avoid runaway for a diode on its own heatsink	2
Junction to case thermal resistance	Rth(j-c)			1.3	°C/W	Per diode	2
Junction to case thermal resistance	Rth(j-c)			0.75	°C/W	Total (both diodes)	2
Coupling thermal resistance	Rth(c)			0.2	°C/W		2
Reverse leakage current	IR			1.5	mA	Per diode; Tj = 25 °C; VR = VRRM; pulse tp = 5 ms, δ < 2%	2
Reverse leakage current	IR		190	400	mA	Per diode; Tj = 125 °C; VR = VRRM; pulse tp = 5 ms, δ < 2%	2
Forward voltage drop	VF			0.35	V	Per diode; Tj = 25 °C; IF = 5 A; pulse tp = 380 µs, δ < 2%	2
Forward voltage drop	VF		0.23		V	Per diode; Tj = 125 °C; IF = 5 A; pulse tp = 380 µs, δ < 2%	2
Forward voltage drop	VF		0.43	0.5	V	Per diode; Tj = 25 °C; IF = 15 A; pulse tp = 380 µs, δ < 2%	2
Forward voltage drop	VF		0.34	0.4	V	Per diode; Tj = 125 °C; IF = 15 A; pulse tp = 380 µs, δ < 2%	2
Forward voltage drop	VF		0.5	0.56	V	Per diode; Tj = 25 °C; IF = 30 A; pulse tp = 380 µs, δ < 2%	2
Forward voltage drop	VF		0.45	0.51	V	Per diode; Tj = 125 °C; IF = 30 A; pulse tp = 380 µs, δ < 2%	2

CAD (KiCad official)

Symbol: STPS61L45CT
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB-3 (KiCad packages3D, STEP)
3D model files: stps61l45ct-etched.step / stps61l45ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stps61l45ct.step / stps61l45ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (8 pp, sha256 12bca3315b843d82, retrieved 2026-10-16, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF