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Contents

README

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WSF5N50A

Winsok Semicon · MOSFETs · TO-252

WSF5N50A from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V max and VGS(th) 2.0 to 4.0 V at ID=250uA.
2 D passive Drain, shown as the center pin and the exposed tab; VDS rated 500 V, continuous ID 4.8 A at TC=25℃.
3 S passive Source; current return terminal, with continuous body-diode source current IS of 3.0 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 500 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 4.8 A TC=25℃, VGS @ 10V 1
Single Pulse Avalanche Energy EAS 57 mJ 1
Repetitive Avalanche Energy EAR 6.4 mJ 1
Total Power Dissipation PD 32.9 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Case RθJC 6.25 ℃/W 1
Continuous Source Current IS 3 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 12 A 2
Diode Forward Voltage VSD 1.4 V VGS=0V, IS=3A, TJ=25℃ 2
Drain-Source Breakdown Voltage BVDSS 500 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2400 3000 mΩ VGS=10V, ID=3.5A 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=400V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 200 uA VDS=400V, VGS=0V, TJ=150℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0V 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.25 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -4.64 mV/℃ 2
Forward Transconductance gfs 5.2 S VDS=30V, ID=2.5A 2
Gate Resistance Rg 4.2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 8 nC VDS=400V, VGS=10V, ID=2A 2
Gate-Source Charge Qgs 1.2 nC VDS=400V, VGS=10V, ID=2A 2
Gate-Drain Charge Qgd 5 nC VDS=400V, VGS=10V, ID=2A 2
Turn-On Delay Time Td(on) 7.8 ns VDD=250V, RG=25Ω, ID=3A 2
Rise Time Tr 33 ns VDD=250V, RG=25Ω, ID=3A 2
Turn-Off Delay Time Td(off) 23 ns VDD=250V, RG=25Ω, ID=3A 2
Fall Time Tf 59 ns VDD=250V, RG=25Ω, ID=3A 2
Output Capacitance Coss 39 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 6 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 80 nS IS=3A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 1.8 uC IS=3A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSF5N50A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf5n50a-etched.step / wsf5n50a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf5n50a.step / wsf5n50a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (7 pp, sha256 fdae95364f3069d8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF