component
WGD5N50SE
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGD5N50SE
Wild Goose · MOSFETs · TO-252
WGD5N50SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | Drain (D) | passive | Drain terminal; rated 500 V drain-source (VDSS) and 5.0 A continuous drain current at Tj=25℃. |
| 3 | Source (S) | passive | Source terminal; the reverse body diode is rated 5.0 A maximum forward current (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Drain Current (Tj=25℃) | ID | 5 | A | Tj=25℃ | 1 | ||
| Drain Current (Tj=100℃) | ID | 2.2 | A | Tj=100℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 270 | mJ | note1 | 1 | ||
| Avalanche Current | IAR | 5 | A | note2 | 1 | ||
| Power Dissipation | PD | 25 | W | Tj=25℃ | 1 | ||
| Junction Temperature (Max) | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | ℃ | 1/8 inch from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.45 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 110 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250μA, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=500V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=400V, Tj=125℃ | 2 | ||
| Gate-body Leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | ID=250μA, VDS=VGS | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.4 | Ω | ID=2.5A, VGS=10V | 2 | ||
| Turn-On Delay Time | Td(on) | 13 | 35 | ns | VDD=250V, ID=5A, RG=25Ω | 2 | |
| Turn-On Rise Time | Tr | 55 | 120 | ns | VDD=250V, ID=5A, RG=25Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 25 | 60 | ns | VDD=250V, ID=5A, RG=25Ω | 2 | |
| Turn-Off Rise Time | Tf | 35 | 80 | ns | VDD=250V, ID=5A, RG=25Ω | 2 | |
| Total Gate Charge | Qg | 13 | 17 | nC | VDS=400V, VGS=10V, ID=5A | 2 | |
| Max. Diode Forward Current | Is | 5 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 20 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.5 | V | ID=5A | 2 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.47 | V/℃ | ID=250μA, reference to 25℃ | 2 |
CAD (KiCad official)
- Symbol:
WGD5N50SE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd5n50se-etched.step/wgd5n50se-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd5n50se.step/wgd5n50se.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (7 pp, sha256
f76394ed4c571284, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).