component
ADW120N040BH
Public Made by Adomby adom
ANHI Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownADW120N040BH
ANHI · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L
ADW120N040BH from ANHI, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement mode with Vth 2 to 4 V, recommended static VGS -5 to 20 V and absolute maximum dynamic VGS -10 to 22 V. |
| 2 | D | passive | Drain, also connected to the exposed tab; VDS rating 1200 V and continuous current 50.5 A at TC=25°C. |
| 3 | S | passive | Source; continuous body-diode source current up to 50.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-247-3L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 50.5 | A | TC=25°C | 2 | ||
| Continuous drain current | ID | 35 | A | TC=100°C | 2 | ||
| Avalanche energy, single pulse | EAS | 990 | mJ | Tc=25℃,VDD=50V,L=10mH, RG=25Ω | 2 | ||
| Gate source voltage (dynamic) | VGS | -10 | 22 | V | Absolute maximum values | 2 | |
| Gate source voltage (static) | VGS | -5 | 20 | V | Recommended operational values | 2 | |
| Power dissipation | Ptot | 273 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 175 | °C | 2 | ||
| Soldering temperature | TL | 260 | °C | Distance of 1.6mm from case for 10s | 2 | ||
| Thermal resistance, junction - case | RthJC | 0.55 | 0.7 | °C/W | 3 | ||
| Thermal resistance, junction - ambient | RthJA | 36 | °C/W | device on PCB, minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 1200 | V | VGS=0V, ID=100uA | 4 | ||
| Gate threshold voltage | V(GS)th | 2 | 2.7 | 4 | V | VDS=VGS, ID=5mA | 4 |
| Zero gate voltage drain current | IDSS | 50 | uA | VDS=1200V, VGS=0V | 4 | ||
| Gate-source leakage current (positive) | IGSS+ | 250 | nA | VGS=22V, VDS=0V | 4 | ||
| Gate-source leakage current (negative) | IGSS- | -100 | nA | VGS=-10V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 40 | 60 | mΩ | VGS=20V, ID=20A, Tj=25°C | 4 | |
| Drain-source on-state resistance | RDS(on) | 66 | mΩ | VGS=20V, ID=20A, Tj=150°C | 4 | ||
| Continuous source current | ISD | 50.5 | A | 5 |
CAD (KiCad official)
- Symbol:
ADW120N040BH - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
adw120n040bh-etched.step/adw120n040bh-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);adw120n040bh.step/adw120n040bh.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (14 pp, sha256
8f57137bd531140a, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).