component
DMC2450UV-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownDMC2450UV-7
Diodes Incorporated · MOSFETs · SOT-563
DMC2450UV-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Q1 N-channel MOSFET (20V BVDSS, 1030mA max ID at VGS = 4.5V). |
| 2 | G1 | input | ESD-protected gate of Q1 N-channel MOSFET with gate threshold 0.5V to 0.9V and VGSS of ±12V. |
| 3 | D2 | passive | Drain of Q2 P-channel MOSFET (-20V BVDSS, -700mA max ID at VGS = -4.5V). |
| 4 | S2 | passive | Source of Q2 P-channel MOSFET. |
| 5 | G2 | input | ESD-protected gate of Q2 P-channel MOSFET with gate threshold -0.5V to -1.0V and VGSS of ±12V. |
| 6 | D1 | passive | Drain of Q1 N-channel MOSFET (20V VDSS, pulsed drain current 3A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 1mA | 3 | ||
| Q1 Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS = 20V, VGS = 0V, TJ = +25°C | 3 | ||
| Q1 Gate-Source Leakage | IGSS | -1 | 1 | µA | VGS = ±5V, VDS = 0V | 3 | |
| Q1 Gate-Source Leakage | IGSS | -10 | 10 | µA | VGS = ±8V, VDS = 0V | 3 | |
| Q1 Gate Threshold Voltage | VGS(TH) | 0.5 | 0.9 | V | VDS = VGS, ID = 250μA | 3 | |
| Q1 Static On-Resistance | RDS(ON) | 0.3 | 0.48 | Ω | VGS = 5.0V, ID = 200mA | 3 | |
| Q1 Static On-Resistance | RDS(ON) | 0.35 | 0.5 | Ω | VGS = 4.5V, ID = 200mA | 3 | |
| Q1 Static On-Resistance | RDS(ON) | 0.45 | 0.7 | Ω | VGS = 2.5V, ID = 200mA | 3 | |
| Q1 Static On-Resistance | RDS(ON) | 0.55 | 0.9 | Ω | VGS = 1.8V, ID = 100mA | 3 | |
| Q1 Static On-Resistance | RDS(ON) | 0.65 | 1.5 | Ω | VGS = 1.5V, ID = 50mA | 3 | |
| Q1 Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 500mA | 3 | |
| Q2 Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -1mA | 6 | ||
| Q2 Zero Gate Voltage Drain Current | IDSS | -100 | nA | VDS = -20V, VGS = 0V, TJ = 25°C | 6 | ||
| Q2 Gate-Source Leakage | IGSS | -1 | 1 | µA | VGS = ±5V, VDS = 0V | 6 | |
| Q2 Gate-Source Leakage | IGSS | -10 | 10 | µA | VGS = ±8V, VDS = 0V | 6 | |
| Q2 Gate Threshold Voltage | VGS(TH) | -0.5 | -1 | V | VDS = VGS, ID = -250μA | 6 | |
| Q2 Static On-Resistance | RDS(ON) | 0.67 | 0.97 | Ω | VGS = -5V, ID = -100mA | 6 | |
| Q2 Static On-Resistance | RDS(ON) | 0.7 | 1 | Ω | VGS = -4.5V, ID = -100mA | 6 | |
| Q2 Static On-Resistance | RDS(ON) | 0.9 | 1.5 | Ω | VGS = -2.5V, ID = -80mA | 6 | |
| Q2 Static On-Resistance | RDS(ON) | 1.2 | 2 | Ω | VGS = -1.8V, ID = -40mA | 6 | |
| Q2 Static On-Resistance | RDS(ON) | 1.5 | 3 | Ω | VGS = -1.5V, ID = -30mA | 6 | |
| Q2 Diode Forward Voltage | VSD | -0.75 | -1.2 | V | VGS = 0V, IS = -330mA | 6 | |
| Q1 Drain-Source Voltage | VDSS | 20 | V | TA = +25°C | 2 | ||
| Q1 Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Q1 Continuous Drain Current | ID | 1030 | mA | VGS = 4.5V, Steady State, TA = +25°C | 2 | ||
| Q1 Continuous Drain Current | ID | 740 | mA | VGS = 1.8V, Steady State, TA = +25°C | 2 | ||
| Q1 Pulsed Drain Current | IDM | 3 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Q1 Body Diode Continuous Current | IS | 800 | mA | TA = +25°C | 2 | ||
| Q2 Drain-Source Voltage | VDSS | -20 | V | TA = +25°C | 2 | ||
| Q2 Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Q2 Continuous Drain Current | ID | -700 | mA | VGS = -4.5V, Steady State, TA = +25°C | 2 | ||
| Q2 Continuous Drain Current | ID | -460 | mA | VGS = -1.8V, Steady State, TA = +25°C | 2 | ||
| Q2 Pulsed Drain Current | IDM | -2 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Q2 Body Diode Continuous Current | IS | -800 | mA | TA = +25°C | 2 | ||
| Total Power Dissipation | PD | 0.45 | W | Note 6, minimum recommended pad layout | 2 | ||
| Total Power Dissipation | PD | 1 | W | Note 7, 1inch square copper plate | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 281 | °C/W | Note 6, Steady State | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 210 | °C/W | Note 6, t<10s | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 129 | °C/W | Note 7, Steady State | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 97 | °C/W | Note 7, t<10s | 2 | ||
| Q1 Static On-Resistance | RDS(ON) | 2 | Ω | VGS = 1.2V, ID = 1mA | 3 | ||
| Q1 Input Capacitance | Ciss | 37.1 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | ||
| Q1 Output Capacitance | Coss | 6.5 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | ||
| Q1 Reverse Transfer Capacitance | Crss | 4.8 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | ||
| Q1 Gate Resistance | Rg | 68 | Ω | VDS = 0V, VGS = 0V | 3 | ||
| Q1 Total Gate Charge | Qg | 0.5 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA | 3 | ||
| Q2 Input Capacitance | Ciss | 46.1 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | ||
| Q2 Output Capacitance | Coss | 7.2 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | ||
| Q2 Reverse Transfer Capacitance | Crss | 4.9 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | ||
| Q2 Gate Resistance | Rg | 14.3 | Ω | VDS = 0V, VGS = 0V | 6 | ||
| Q1 Turn-On Delay Time | tD(ON) | 4.06 | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 3 | ||
| Q1 Turn-Off Delay Time | tD(OFF) | 13.74 | ns | VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA | 3 | ||
| Q2 Turn-On Delay Time | tD(ON) | 8.5 | ns | VDD = -3V, VGS = -2.5V, RL = 300Ω, RG = 25Ω, ID = -100mA | 6 | ||
| Q2 Turn-Off Delay Time | tD(OFF) | 20.2 | ns | VDD = -3V, VGS = -2.5V, RL = 300Ω, RG = 25Ω, ID = -100mA | 6 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper | 1 |
CAD (KiCad official)
- Symbol:
DMC2450UV-7 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
dmc2450uv-7-etched.step/dmc2450uv-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc2450uv-7.step/dmc2450uv-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
af32362280127a02, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).