component
2SAR572D3FRATL
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SAR572D3FRATL
ROHM Semicon · Bipolar (BJT) · TO-252
2SAR572D3FRATL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; VEBO max is -6 V and the collector-emitter saturation voltage is -400 mV max at IC/IB = -2 A/-100 mA. |
| 2 | Collector | passive | Collector terminal (also the tab) with VCEO of -30 V, VCBO of -30 V, and IC of -5 A continuous (-10 A pulsed, Pw = 10 ms). |
| 3 | Emitter | passive | Emitter terminal of the PNP transistor, the reference for the -6 V maximum emitter-base voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -30 | V | IC = -100μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -30 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -100μA | 2 | ||
| Collector cut-off current | ICBO | -1 | μA | VCB = -30V | 2 | ||
| Emitter cut-off current | IEBO | -1 | μA | VEB = -4V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -200 | -400 | mV | IC = -2A, IB = -100mA | 2 | |
| DC current gain | hFE | 200 | 500 | - | VCE = -3V, IC = -500mA | 2 | |
| Collector-base voltage | VCBO | -30 | V | 2 | |||
| Collector-emitter voltage | VCEO | -30 | V | 2 | |||
| Emitter-base voltage | VEBO | -6 | V | 2 | |||
| Collector current | IC | -5 | A | 2 | |||
| Collector current (pulsed) | ICP | -10 | A | Pw=10ms Single Pulse | 2 | ||
| Power dissipation | PD | 10 | W | Tc=25℃ | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SAR572D3FRATL - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sar572d3fratl-etched.step/2sar572d3fratl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sar572d3fratl.step/2sar572d3fratl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
5e304ff91220ffd5, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).