IR2184SPBF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	IN	input	Logic input for the high and low side gate driver outputs (HO and LO), in phase with HO and referenced to COM, with VIH min 2.7 V and VIL max 0.8 V over VCC 10 V to 20 V and an internal 5.2 V zener clamp.
2	SD	input	Logic shutdown input referenced to COM, with positive-going threshold min 2.7 V and negative-going threshold max 0.8 V, and an internal 5.2 V zener clamp.
3	COM	power_in	Low side return and reference for the logic inputs and the LO/HO output voltages; all absolute voltage ratings are referenced to COM.
4	LO	output	Low side gate drive output, operating between 0 V and VCC, with 1.4 A source / 1.8 A sink output current capability.
5	VCC	power_in	Low side and logic fixed supply, recommended range 10 V to 20 V with an absolute maximum of 25 V (undervoltage lockout applies).
6	VS	power_in	High side floating supply return, rated for offset of up to 600 V (recommended) with dVS/dt transients limited to 50 V/ns.
7	HO	output	High side gate drive output, operating between VS and VB, in phase with the IN input.
8	VB	power_in	High side floating supply, recommended VS + 10 V to VS + 20 V with an absolute maximum of 625 V, supplying the high side driver through a bootstrap circuit.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	SOIC-8
Category	Power Management ICs
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
High side floating absolute voltage	VB	-0.3		625	V		2
Low side and logic fixed supply voltage	VCC	-0.3		25	V		2
Low side output voltage	VLO	-0.3			V		2
Allowable offset supply voltage transient	dVS/dt			50	V/ns		2
Package power dissipation (8-lead SOIC)	PD			0.625	W	TA ≤ +25°C	2
Thermal resistance, junction to ambient (8-lead SOIC)	RthJA			200	°C/W		2
Junction temperature	TJ			150	°C		2
Storage temperature	TS	-50		150	°C		2
Lead temperature (soldering)	TL			300	°C	soldering, 10 seconds	2
High side floating supply offset voltage	VS			600	V	Note 1: logic operational for VS of -5 to +600V	2
Low side and logic fixed supply voltage	VCC	10		20	V		2
Low side output voltage	VLO	0			V		2
Ambient temperature	TA	-40		125	°C		2
Turn-on propagation delay	ton		680	900	ns	VS = 0V	3
Turn-off propagation delay	toff		270	400	ns	VS = 0V or 600V	3
Shut-down propagation delay	tsd		180	270	ns		3
Delay matching, HS & LS turn-on	MTon		0	90	ns		3
Delay matching, HS & LS turn-off	MToff		0	40	ns		3
Turn-on rise time	tr		40	60	ns	VS = 0V	3
Turn-off fall time	tf		20	35	ns	VS = 0V	3
Deadtime: LO turn-off to HO turn-on (DTLO-HO) and HO turn-off to LO turn-on (DTHO-LO)	DT	280	400	520	ns	RDT = 0	3
Deadtime matching = DTLO-HO - DTHO-LO	MDT		0	50	ns	RDT = 0	3
Deadtime matching = DTLO-HO - DTHO-LO	MDT		0	600	ns	RDT = 200k	3
Logic 1 input voltage for HO & logic 0 for LO	VIH	2.7			V	VCC = 10V to 20V	3
Logic 0 input voltage for HO & logic 1 for LO	VIL			0.8	V	VCC = 10V to 20V	3
SD input positive going threshold	VSD,TH+	2.7			V	VCC = 10V to 20V	3
SD input negative going threshold	VSD,TH-			0.8	V	VCC = 10V to 20V	3
High level output voltage, VBIAS - VO	VOH			1.2	V	IO = 0A	3
Low level output voltage, VO	VOL			0.1	V	IO = 0A	3
Offset supply leakage current	ILK			50	µA	VB = VS = 600V	3
Quiescent VBS supply current	IQBS	20	60	150	µA	VIN = 0V or 5V	3
Quiescent VCC supply current	IQCC	0.4	1	1.6	mA	VIN = 0V or 5V	3
Logic 1 input bias current	IIN+		25	60	µA	IN = 5V, SD = 0V	3
Logic 0 input bias current	IIN-			1	µA	IN = 0V, SD = 5V	3
VCC and VBS supply undervoltage positive going threshold	VCCUV+	8	8.9	9.8	V		3
VCC and VBS supply undervoltage negative going threshold	VCCUV-	7.4	8.2	9	V		3
Undervoltage hysteresis (VCC)	VCCUVH	0.3	0.7		V		3
Undervoltage hysteresis (VBS)	VBSUVH	0.3	0.7		V		3
Output high short circuit pulsed current	IO+	1.4	1.9		A	VO = 0V, PW ≤ 10 µs	3
Output low short circuit pulsed current	IO-	1.8	2.3		A	VO = 15V, PW ≤ 10 µs	3

CAD (KiCad official)

Symbol: IR2184SPBF
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOIC-8 (KiCad packages3D, STEP)
3D model files: ir2184spbf-etched.step / ir2184spbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ir2184spbf.step / ir2184spbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (24 pp, sha256 d5cd4452f90d35b1, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IR2184SPBF

Verified IR2184SPBF

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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