component
HPESD12VS1ULD
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHPESD12VS1ULD
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HPESD12VS1ULD from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Pin 1 is one of the two terminals of the unidirectional ESD protection diode that protects one data or control line, and the datasheet does not state which terminal is the line and which is the reference. |
| 2 | 2 | passive | Pin 2 is the second terminal of the unidirectional ESD protection diode that protects one data or control line, and the datasheet does not state its function or polarity. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Peak Pulse Power | PPP | 150 | W | tp = 8/20 μs | 1 | ||
| Reverse Breakdown Voltage | VBR | 13.3 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 1000 | nA | VRWM = 12V | 2 | ||
| Reverse Working Voltage | VRWM | 12 | V | 2 | |||
| ESD IEC61000-4-2 air discharge | 15 | kV | IEC 61000-4-2 air discharge | 1 | |||
| ESD IEC61000-4-2 contact discharge | 8 | kV | IEC 61000-4-2 contact discharge | 1 | |||
| EFT IEC61000-4-4 | 40 | A | IEC 61000-4-4 (EFT) | 1 |
CAD (KiCad official)
- Symbol:
HPESD12VS1ULD - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hpesd12vs1uld-etched.step/hpesd12vs1uld-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hpesd12vs1uld.step/hpesd12vs1uld.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
41b3ab99f16dc8fc, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).