component

120N10

Public Unreviewed

by Ray

GOODWORK MOSFETs, TO-263. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristors120n10
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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120N10

GOODWORK · MOSFETs · TO-263

120N10 from GOODWORK, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOS control terminal; drive with VGS up to ±20 V (absolute max) and typically 10 V for full enhancement. VGS(th) is 2.0-4.0 V (typ 3.0 V). Total gate charge Qg ≈ 84 nC at VGS=10 V, Rg ≈ 1.9 Ω.
2 D passive Drain. Power terminal of the N-channel MOSFET. VDS rated 100 V, continuous ID up to 200 A (TC=25°C) / 120 A (TC=100°C), pulsed IDM 689 A. Internally connected to the exposed tab of the TO-263/D2PAK package.
3 S passive Source. Return terminal for drain current and reference for VGS. Body diode anode is internally tied to source (VSD ~0.66 V typ at IS=1 A, IS continuous 215 A).
4 D (Tab) passive Exposed drain tab of the TO-263 / D2PAK package. Electrically identical to pin 2 (Drain) and serves as the primary thermal path for heatsinking to the PCB copper pour.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package TO-263
Category Transistors/Thyristors
Pins 4

CAD (KiCad official)

  • Symbol: 120N10
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (None pp, sha256 96835e9ba51dd7cf, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF