component
HSH100P06
Public Made by Adomby adom
HUASHUO MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSH100P06
HUASHUO · MOSFETs · TO-263
HSH100P06 from HUASHUO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the pin configuration drawing labels it G, with a gate-source voltage rating of ±20 V. |
| 2 | D | passive | Drain, the exposed tab, which the drawing labels D; the middle lead position is absent in the outline. Drain-source voltage is -60 V and continuous drain current is -100 A at TC=25℃. |
| 3 | S | passive | Source; the pin configuration drawing labels it S. Continuous source (body diode) current is -100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 8 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 10 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.65 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -100 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -280 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TC=25℃) | ID@TC=25℃ | -100 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current (TC=100℃) | ID@TC=100℃ | -70 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -280 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 310 | mJ | 1 | |||
| Avalanche Current | IAS | 100 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 210 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.71 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSH100P06 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
hsh100p06-etched.step/hsh100p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsh100p06.step/hsh100p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
04b6f850fd97e5f0, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).