component
SWNB4N65DA
Public Made by Adomby adom
Samwin MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWNB4N65DA
Samwin · MOSFETs · TO-251
SWNB4N65DA from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate to source voltage is rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain to source voltage is rated at 650 V (VDSS) with continuous drain current of 4 A at TC=25oC. |
| 3 | Source | passive | Source is the MOSFET reference terminal, with integral reverse p-n junction diode rated at 4 A continuous source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 650 | V | 1 | |||
| Continuous drain current | ID | 4 | A | TC=25oC | 1 | ||
| Continuous drain current | ID | 2.5 | A | TC=100oC | 1 | ||
| Drain current pulsed | IDM | 16 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 107 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 6 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 113.6 | W | TC=25oC | 1 | ||
| Derating factor above 25oC | 0.9 | W/oC | above 25oC | 1 | |||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, junction to case | Rthjc | 1.1 | oC/W | 1 | |||
| Thermal resistance, junction to ambient | Rthja | 105 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.61 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=520V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 3.35 | 3.65 | Ω | VGS=10V, ID=1.5A | 2 | |
| Forward transconductance | Gfs | 3.1 | S | VDS=30V, ID=2A | 2 | ||
| Input capacitance | Ciss | 438 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 49 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 5.4 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 12 | ns | VDS=325V, ID=4A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Rising time | tr | 26 | ns | VDS=325V, ID=4A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Turn off delay time | td(off) | 34 | ns | VDS=325V, ID=4A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Fall time | tf | 24 | ns | VDS=325V, ID=4A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Total gate charge | Qg | 13 | nC | VDS=520V, VGS=10V, ID=4A (note 4,5) | 2 | ||
| Gate-source charge | Qgs | 2.6 | nC | VDS=520V, VGS=10V, ID=4A (note 4,5) | 2 | ||
| Gate-drain charge | Qgd | 7 | nC | VDS=520V, VGS=10V, ID=4A (note 4,5) | 2 | ||
| Gate resistance | Rg | 3.3 | Ω | VDS=0V, Scan F mode | 2 | ||
| Continuous source current | IS | 4 | A | integral reverse p-n junction diode | 2 | ||
| Pulsed source current | ISM | 16 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=4A, VGS=0V | 2 | ||
| Reverse recovery time | trr | 329 | ns | IS=4A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 2 | uC | IS=4A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWNB4N65DA - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
swnb4n65da-etched.step/swnb4n65da-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swnb4n65da.step/swnb4n65da.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
a0dd0b775a80a069, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).