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Contents

README

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JSM6435

JSMSEMI · MOSFETs · DFN-8(5x6)

JSM6435 from JSMSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pin 1, marked with a dot); continuous drain current is -34 A at TC=25°C.
2 S passive Source of the P-channel MOSFET, tied to the other source pins; continuous drain current is -34 A at TC=25°C.
3 S passive Source of the P-channel MOSFET, tied to the other source pins; continuous drain current is -34 A at TC=25°C.
4 G input Gate of the P-channel MOSFET; maximum gate-source voltage is ±25 V and the threshold voltage is -1.7 to -3 V.
5 D passive Drain of the P-channel MOSFET, tied to the other drain pins; maximum drain-source voltage is -30 V.
6 D passive Drain of the P-channel MOSFET, tied to the other drain pins; maximum drain-source voltage is -30 V.
7 D passive Drain of the P-channel MOSFET, tied to the other drain pins; maximum drain-source voltage is -30 V.
8 D passive Drain of the P-channel MOSFET, tied to the other drain pins; maximum drain-source voltage is -30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current (TC=25°C) ID -34 A TC=25°C 1
Continuous Drain Current (TC=100°C) ID -21.5 A TC=100°C 1
Pulsed Drain Current IDM -95 A 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 24 30 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 53 64 °C/W Steady-State 1
Maximum Junction-to-Case (Steady-State) RθJC 3.4 4 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±25V 2
Gate Threshold Voltage VGS(th) -1.7 -2.3 -3 V VDS=VGS, ID=-250µA 2
On-State Drain Current ID(ON) -95 A VGS=-10V, VDS=-5V 2
Static Drain-Source On-Resistance RDS(ON) 0.012 Ω VGS=-10V, ID=-20A 1
Static Drain-Source On-Resistance RDS(ON) 0.02 Ω VGS=-5V, ID=-15A 1
Diode Forward Voltage VSD -0.73 -1 V IS=-1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -35 A 2
Input Capacitance Ciss 1130 1400 pF VGS=0V, VDS=-15V, f=1MHz 2
Gate Resistance Rg 5.8 8 Ω VGS=0V, VDS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: JSM6435
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: jsm6435-etched.step / jsm6435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jsm6435.step / jsm6435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (7 pp, sha256 0c3a6f30205def36, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF