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NSS1C200LT1G

Public Made by Adom

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onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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NSS1C200LT1G

onsemi · Bipolar (BJT) · SOT-23

NSS1C200LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet gives no base-specific limit, and the device-level emitter-base voltage is VEBO −7.0 Vdc maximum.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of −7.0 Vdc and an emitter cutoff current IEBO of −50 nAdc maximum at VEB = −6.0 Vdc.
3 COLLECTOR passive Collector terminal of the PNP transistor; the device is rated for a collector-emitter voltage VCEO of −100 Vdc and a continuous collector current IC of −2.0 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -100 Vdc IC = −10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -140 Vdc IC = −0.1 mAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -7 Vdc IE = −0.1 mAdc, IC = 0 2
Collector Cutoff Current ICBO -100 nAdc VCB = −140 Vdc, IE = 0 2
Emitter Cutoff Current IEBO -50 nAdc VEB = −6.0 Vdc 2
DC Current Gain hFE 150 IC = −10 mA, VCE = −2.0 V 2
DC Current Gain hFE 120 IC = −500 mA, VCE = −2.0 V 2
DC Current Gain hFE 80 IC = −1.0 A, VCE = −2.0 V 2
DC Current Gain hFE 50 IC = −2.0 A, VCE = −2.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.04 V IC = −0.1 A, IB = −0.01 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.08 V IC = −0.5 A, IB = −0.05 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.115 V IC = −1.0 A, IB = −0.100 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = −2.0 A, IB = −0.200 A 2
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = −1.0 A, IB = −0.100 A 2
Base-Emitter Turn-on Voltage VBE(on) -0.85 V IC = −1.0 A, VCE = −2.0 V 2
Cutoff Frequency fT 120 MHz IC = −100 mA, VCE = −5.0 V, f = 100 MHz 2
Input Capacitance Cibo 200 pF VEB = 2.0 V, f = 1.0 MHz 2
Output Capacitance Cobo 22 pF VCB = 10 V, f = 1.0 MHz 2
Collector-Emitter Voltage VCEO -100 Vdc TA = 25°C (Maximum Ratings table) 1
Collector-Base Voltage VCBO -140 Vdc TA = 25°C (Maximum Ratings table) 1
Emitter-Base Voltage VEBO -7 Vdc TA = 25°C (Maximum Ratings table) 1
Collector Current - Continuous IC -2 A 1
Collector Current - Peak ICM -3 A 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation PD 490 mW TA = 25°C, FR-4 @ 100 mm2, 1 oz. copper traces (Note 1) 1
Total Device Dissipation PD 710 mW TA = 25°C, FR-4 @ 500 mm2, 1 oz. copper traces (Note 2) 1
Thermal Resistance, Junction-to-Ambient RJA 255 °C/W FR-4 @ 100 mm2, 1 oz. copper traces (Note 1) 1
Thermal Resistance, Junction-to-Ambient RJA 176 °C/W FR-4 @ 500 mm2, 1 oz. copper traces (Note 2) 1

CAD (KiCad official)

  • Symbol: NSS1C200LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nss1c200lt1g-etched.step / nss1c200lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nss1c200lt1g.step / nss1c200lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 d8347e784212b027, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF