component
HSS2319
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSS2319
HUASHUO · MOSFETs · SOT-23L
HSS2319 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 V to -2.5 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source (body diode) current is -3.2 A max. |
| 3 | D | passive | Drain; drain-source voltage is -40 V max and continuous drain current is -3.2 A at steady state (TA=25℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current 10s | ID@TA=25℃ | -3.7 | A | VGS @ -4.5V, 10s | 1 | ||
| Continuous Drain Current Steady State | ID@TA=25℃ | -3.2 | A | VGS @ -4.5V, steady state | 1 | ||
| Continuous Drain Current 10s | ID@TA=70℃ | -3 | A | VGS @ -4.5V, 10s | 1 | ||
| Continuous Drain Current Steady State | ID@TA=70℃ | -2.6 | A | VGS @ -4.5V, steady state | 1 | ||
| Pulsed Drain Current | IDM | -16.1 | A | 1 | |||
| Total Power Dissipation 10s | PD@TA=25℃ | 1.32 | W | 10s | 1 | ||
| Total Power Dissipation Steady State | PD@TA=25℃ | 1 | W | steady state | 1 | ||
| Total Power Dissipation 10s | PD@TA=70℃ | 0.84 | W | 10s | 1 | ||
| Total Power Dissipation Steady State | PD@TA=70℃ | 0.64 | W | steady state | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 95 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS=-4.5V , ID=-3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 100 | mΩ | VGS=-2.5V , ID=-2A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -3.2 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -16.1 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.018 | V/℃ | Reference to 25℃ , ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 2.5 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 5.8 | S | VDS=-5V , ID=-3A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 6.4 | nC | VDS=-32V , VGS=-4.5V , ID=-3A | 2 | ||
| Gate-Source Charge | Qgs | 2.1 | nC | VDS=-32V , VGS=-4.5V , ID=-3A | 2 | ||
| Gate-Drain Charge | Qgd | 2.5 | nC | VDS=-32V , VGS=-4.5V , ID=-3A | 2 | ||
| Turn-On Delay Time | Td(on) | 4.2 | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | ||
| Rise Time | Tr | 23 | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | ||
| Turn-Off Delay Time | Td(off) | 26.8 | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | ||
| Fall Time | Tf | 20.6 | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 | ||
| Input Capacitance | Ciss | 620 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 65 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 53 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HSS2319 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss2319-etched.step/hss2319-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss2319.step/hss2319.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
57ad4596a58a5327, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).