component
GT55N06D5-B
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGT55N06D5-B
GOFORD · MOSFETs · DFN5x6-8L
GT55N06D5-B from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; the datasheet lists VDS 60V and ID 45A for the device. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; the maximum gate-source voltage is ±20V and the threshold VGS(th) is 1V min to 2.4V max. |
| 5 | D | passive | Drain of the N-channel MOSFET; the maximum drain-source voltage is 60V and the continuous drain current is 45A. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 45 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current (note1) | IDM | 180 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 69 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy (note2) | EAS | 49 | mJ | Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω (note 2) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 17 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 1.8 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 9.5 | 11 | mΩ | VGS = 10V, ID = 14A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 15 | 17 | mΩ | VGS = 4.5V, ID = 10A | 2 | |
| Continuous Body Diode Current | IS | 45 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 14A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
GT55N06D5-B - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
gt55n06d5-b-etched.step/gt55n06d5-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt55n06d5-b.step/gt55n06d5-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
49ac056e9653c07e, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).