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WSF40P03

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

WSF40P03

Winsok Semicon · MOSFETs · TO-252

WSF40P03 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET, with VGS rated ±25 V absolute maximum and threshold VGS(th) of -1.2 V min to -2.5 V max at ID=-250uA.
2 D passive Drain, also connected to the exposed tab; VDS rated -30 V, continuous ID -40 A at TC=25℃ and pulsed -160 A.
3 S passive Source; continuous source (body diode) current is -20 A max with forward voltage -1.2 V max at IS=-1A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID@TC=25℃ -40 A VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -25 A VGS @ -10V 1
Continuous Drain Current ID@TA=25℃ -9.6 A VGS @ -10V 1
Continuous Drain Current ID@TA=70℃ -7.7 A VGS @ -10V 1
Pulsed Drain Current IDM -160 A Pulse width limited by max. junction temperature (note a) 1
Single Pulse Avalanche Energy EAS 28 mJ UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature Tj=25℃) (note b) 1
Avalanche Current IAS -20 A UIS tested (note b) 1
Total Power Dissipation PD@TA=25℃ 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 50 ℃/W Surface Mounted on 1in2 pad area (note c) 1
Thermal Resistance Junction-Case RθJC 2.9 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V , ID=-250uA 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS -20 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A 2
Static Drain-Source On-Resistance RDS(ON) 15 18 mΩ VGS=-10V , ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 20 26 mΩ VGS=-4.5V , ID=-15A 2
Turn-On Delay Time Td(on) 11 20 ns 2
Rise Time Tr 10 18 ns 2
Turn-Off Delay Time Td(off) 39 70 ns 2
Fall Time Tf 29 53 ns 2
Input Capacitance Ciss 1256 1633 pF 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.022 V/℃ Reference to 25℃ , ID=-1mA 2
Gate Resistance Rg 3.5 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 11 nC 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 5 nC 2
Output Capacitance Coss 187 pF 2
Reverse Transfer Capacitance Crss 115 pF 2
Reverse Recovery Time trr 12 nS IF=-20A , dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 3.5 nC 2

CAD (KiCad official)

  • Symbol: WSF40P03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf40p03-etched.step / wsf40p03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf40p03.step / wsf40p03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 bda0a8f3c6199b22, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF