Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HRCLAMP0551P

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HRCLAMP0551P from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Bi-directional ESD protection line terminal protecting one I/O line, 5V working voltage (VRWM), 6.0V min breakdown at 1mA, ±8kV contact/±15kV air IEC 61000-4-2.
2 2 passive Second terminal of the bi-directional ESD protection diode, connected to the I/O line or to ground as the application requires, 5V working voltage (VRWM).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 0.1 μA VRWM = 5.0V 2
Clamping Voltage VC 13 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 25 V IPP = 4A, tp = 8/20μs 2
TLP Clamping Voltage VCTLP 26 V IPP = 8A, IEC61000-4-2 Level 2 equivalent (±4kV Contact, ±8kV Air) 2
TLP Clamping Voltage VCTLP 38 V IPP = 16A, IEC61000-4-2 Level 4 equivalent (±8kV Contact, ±16kV Air) 2
Peak Pulse Power PPP 100 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD IEC61000-4-2 air discharge -15 15 kV IEC61000-4-2 air discharge 1
ESD IEC61000-4-2 contact discharge -8 8 kV IEC61000-4-2 contact discharge 1
EFT IEC61000-4-4 40 A 5/50 ns 1
Reverse Working Voltage VRWM 5 V 2
Junction Capacitance CJ 0.25 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: HRCLAMP0551P
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hrclamp0551p-etched.step / hrclamp0551p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hrclamp0551p.step / hrclamp0551p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 c8c06ade8f7f56db, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF