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HMDD1902

Public Made by Adom

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshmdd1902factory-2.0.0extractor-text

Verified HMDD1902

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HMDD1902 · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-zgghvell/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hmdd1902.kicad_sym✓ hmdd1902.kicad_mod✓ hmdd1902.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HMDD1902

HXY MOSFET · MOSFETs · TO-252-2L

HMDD1902 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V, with a threshold of 2.0 V min to 4.0 V max at ID=250μA.
2 D passive Drain of the N-channel MOSFET; drain-source voltage is rated 100 V and continuous drain current 50 A at TC=25℃.
3 S passive Source of the N-channel MOSFET; body diode continuous forward current is 50 A and pulsed 150 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 50 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 30 A VGS @ 10V 1
Pulsed Drain Current IDM 150 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 62.6 mJ TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 73 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 2 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 2 2.7 4 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 18 28 mΩ VGS=10V, ID=20A 2
Static Drain-Source on-Resistance RDS(on) 22 32 mΩ VGS=4.5V, ID=10A 2
Maximum Continuous Drain to Source Diode Forward Current IS 50 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 150 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 2
Input Capacitance Ciss 3727 pF VDS=25V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 40 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Source Charge Qgs 6.2 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Drain Charge Qgd 28 nC VDS=30V, ID=15A, VGS=10V 2
Turn-on Delay Time td(on) 22 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-on Rise Time tr 182 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-off Delay Time td(off) 80 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-off Fall Time tf 142 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Body Diode Reverse Recovery Time trr 71 ns IF=30A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 145 nC IF=30A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: HMDD1902
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hmdd1902-etched.step / hmdd1902-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmdd1902.step / hmdd1902.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d203aab6914d73c2, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF