component
BMW65N190UC1
Public Made by Adomby adom
Bestirpower MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBMW65N190UC1
Bestirpower · MOSFETs · TO-247
BMW65N190UC1 from Bestirpower, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET, with VGSS rating of ±30 V and threshold VGS(th) 3.0 to 5.0 V at ID = 250 µA. |
| 2 | D | passive | Drain, also connected to the mounting tab; VDSS rating is 650 V and drain current is 20 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous drain current is 20 A at TC = 25 °C and 12 A at TC = 100 °C with VGS = 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 650 | V | VGS= 0 V, ID = 1mA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 650 V, VGS = 0 V TJ=25°C | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30 V, VDS = 0 V | 3 | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VGS = VDS, ID = 250μA | 3 | |
| Static Drain to Source On Resistance | RDS(on) | 170 | 190 | mΩ | VGS = 10 V, ID = 7A | 3 | |
| Drain to Source Voltage | VDSS | 650 | V | 2 | |||
| Gate to Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Drain Current | ID | 20 | A | VGS = 10 V, (TC= 25℃) | 2 | ||
| Drain Current | ID | 12 | A | VGS = 10 V,(TC= 100℃) | 2 | ||
| Drain Current Pulsed | IDM | 58 | A | 2 | |||
| Single Pulsed Avalanche Energy | EAS | 306 | mJ | 2 | |||
| Diode Recovery dv/dt | dv/dt | 50 | V/ns | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum Operating Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Maximum Lead Temperature for Soldering, 1/8 inch from Case | TL | 260 | ℃ | 1/8” from Case for 10 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.67 | ℃/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
BMW65N190UC1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
bmw65n190uc1-etched.step/bmw65n190uc1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bmw65n190uc1.step/bmw65n190uc1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (12 pp, sha256
98316b1974ca6295, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).