BSC900N20NS3 G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the N-channel MOSFET (pin 1, marked by the dot); VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C.
2	S	passive	Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C.
3	S	passive	Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C.
4	G	input	Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V.
5	D	passive	Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A.
6	D	passive	Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A.
7	D	passive	Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A.
8	D	passive	Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	DFN5x6-8
Category	Triode/MOS Tube/Transistor
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			200	V		1
Gate-source voltage	VGS	-20		20	V		1
Continuous drain current	ID			30	A	TJ = 150 °C; TC = 25 °C	1
Continuous drain current	ID			23	A	TJ = 150 °C; TC = 70 °C	1
Continuous drain current	ID			7.6	A	TA = 25 °C; notes b, c	1
Continuous drain current	ID			5.9	A	TA = 70 °C; notes b, c	1
Pulsed drain current	IDM			70	A	t = 100 μs	1
Continuous source-drain diode current	IS			30	A	TC = 25 °C	1
Continuous source-drain diode current	IS			5.6	A	TA = 25 °C; notes b, c	1
Single pulse avalanche current	IAS			30	A	L = 0.1 mH	1
Single pulse avalanche energy	EAS			45	mJ		1
Maximum power dissipation	PD			6.25	W	TA = 25 °C; notes b, c	1
Maximum power dissipation	PD			4	W	TA = 70 °C; notes b, c	1
Operating junction and storage temperature range	TJ, Tstg	-55		150	°C		1
Soldering recommendations (peak temperature)				260	°C	peak temperature; note c	1
Maximum junction-to-ambient	RthJA		15	20	°C/W	t ≤ 10 s; surface mounted	1
Maximum junction-to-ambient (steady state)	RthJA			54	°C/W	steady state (note f)	1
Drain-source breakdown voltage	VDS	200			V	VGS = 0 V, ID = 250 μA	2
Gate-source threshold voltage	VGS(th)	2		4	V	VDS = VGS, ID = 250 μA	2
Gate-source leakage	IGSS			100	nA	VDS = 0 V, VGS = ±20 V	2
Zero gate voltage drain current	IDSS			1	μA	VDS = 200 V, VGS = 0 V	2
Zero gate voltage drain current	IDSS			15	μA	VDS = 200 V, VGS = 0 V, TJ = 70 °C	2
On-state drain current	ID(on)	30			A	VDS ≥ 10 V, VGS = 10 V	2
Gate resistance	Rg	0.6	2.1	4	Ω	f = 1 MHz	2
Rise time	tr		20	40	ns	VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-off delay time	td(off)		20	40	ns	VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω	2
Fall time	tf		24	48	ns	VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-on delay time	td(on)		11	22	ns	VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω	2
Rise time	tr		27	54	ns	VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω	2
Turn-off delay time	td(off)		18	36	ns	VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω	2
Total gate charge	Qg		25	38	nC	VDS = 100 V, VGS = 10 V, ID = 10 A	2
Total gate charge	Qg		20	30	nC	VDS = 100 V, VGS = 7.5 V, ID = 10 A	2
Continuous source-drain diode current	IS			35.4	A	TC = 25 °C	2
Pulse diode forward current	ISM			80	A		2
Body diode voltage	VSD		0.77	1.1	V	IS = 5 A, VGS = 0 V	2
Body diode reverse recovery time	trr		100	200	ns	IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C	2
Body diode reverse recovery charge	Qrr		400	800	nC	IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	copper		d. The DFN5X 6X is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process	1

CAD (KiCad official)

Symbol: BSC900N20NS3 G-VB
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: bsc900n20ns3-g-vb-etched.step / bsc900n20ns3-g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc900n20ns3-g-vb.step / bsc900n20ns3-g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 dc37bf9c66e7b8f3, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BSC900N20NS3 G-VB

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3D Model

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