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Contents

README

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MBT3904DW1T1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-363

MBT3904DW1T1G-HXY from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (pin 1 corner, bottom-left in the package drawing).
2 B1 passive Base of transistor 1; VEBO is rated 6 V maximum.
3 C2 passive Collector of transistor 2; VCEO 40 V and VCBO 60 V maximum, IC 200 mA maximum.
4 E2 passive Emitter of transistor 2.
5 B2 passive Base of transistor 2; VEBO is rated 6 V maximum.
6 C1 passive Collector of transistor 1; VCEO 40 V and VCBO 60 V maximum, IC 200 mA maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 40 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 200 mA 1
Collector Power Dissipation PC 200 mW 1
Thermal Resistance From Junction To Ambient RΘJA 625 °C/W 1
Operation Junction And Storage Temperature Range TJ ,Tstg -55 150 °C 1
Collector-base breakdown voltage V(BR)CBO 60 V IC=10µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 1
Collector cut-off current ICEX 50 nA VCE=30V, VEB(off)=3V 1
Emitter cut-off current IEBO 50 nA VEB=5V, IC=0 1
DC current gain(1) hFE(1) 40 VCE=1V, IC=100μA 1
DC current gain(2) hFE(2) 70 VCE=1V, IC=1mA 1
DC current gain(3) hFE(3) 100 300 VCE=1V, IC=10mA 1
DC current gain(4) hFE(4) 60 VCE=1V, IC=50mA 1
DC current gain(5) hFE(5) 30 VCE=1V, IC=100mA 1
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=10mA, IB=1mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 1
Base-emitter saturation voltage VBE(sat) 0.65 0.85 V IC=10mA, IB=1mA 1
Base-emitter saturation voltage VBE(sat) 0.95 V IC=50mA, IB=5mA 1
Transition frequency fT 300 MHz VCE=20V, IC=10mA, f=100MHz 1
Collector output capacitance Cob 4 pF VCB=5V, IE=0, f=1MHz 1
Noise figure NF 5 dB VCE=5V, Ic=0.1mA, f=1kHz, Rg=1KΩ 1
Delay time td 35 ns VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA 1
Rise time tr 35 ns 1
Storage time ts 200 ns VCC=3V, IC=10mA, IB1=IB2=1mA 1
Fall time tf 50 ns 1

CAD (KiCad official)

  • Symbol: MBT3904DW1T1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mbt3904dw1t1g-hxy-etched.step / mbt3904dw1t1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbt3904dw1t1g-hxy.step / mbt3904dw1t1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 c9507f543eab8f52, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF