component
NP2060G
Public Made by Adomby adom
NATLINEAR MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNP2060G
NATLINEAR · MOSFETs · TO-252-2L
NP2060G from NATLINEAR, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with VGS rated ±12V, threshold 0.5V min to 1.2V max at ID=250µA, and gate leakage up to ±100nA. |
| 2 | D | passive | Drain, connected to the exposed metal tab, with VDS rated 20V and continuous ID of 60A at TC=25°C (210A pulsed). |
| 3 | S | passive | Source of the N-channel MOSFET; the body diode runs from source to drain with VSD up to 1.2V at ISD=10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 42 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDP | 210 | A | 1 | |||
| Avalanche energy | EAS | 200 | mJ | L=0.5mH (note 1) | 1 | ||
| Maximum power dissipation | PD | 60 | W | TC=25°C | 1 | ||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=20V, VGS=0V; TJ=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | µA | VDS=20V, VGS=0V; TJ=85°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate threshold voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 4.8 | 6 | mΩ | VGS=4.5V, ID=60A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 6.2 | 9 | mΩ | VGS=2.5V, ID=40A | 2 | |
| On Status Drain Current | ID(ON) | 60 | A | VDS=20V, VGS=4.5V | 2 | ||
| Diode Continuous Forward Current | IS | 12 | A | 2 | |||
| Diode forward voltage | VSD | 0.8 | 1.2 | V | ISD=10A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
NP2060G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
np2060g-etched.step/np2060g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np2060g.step/np2060g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (5 pp, sha256
f8359b7fbabab52f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).