component
AOB10B65M1
Public Made by Adomby adom
Alpha Omega Semicon IGBT Transistors / Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOB10B65M1
Alpha Omega Semicon · IGBT Transistors / Modules · TO-263
AOB10B65M1 from Alpha Omega Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-emitter voltage is rated at ±30V absolute maximum, with a typical threshold of 5.1V (4.5V to 5.7V). |
| 2 | C | passive | Collector (also the exposed tab, per the package picture), rated at 650V collector-emitter voltage and 20A continuous at TC=25°C (10A at TC=100°C). |
| 3 | E | passive | Emitter, which is the anode side of the anti-parallel diode, with continuous diode forward current of 20A at TC=25°C (10A at TC=100°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BV CES | 650 | V | IC=1mA, VGE=0V, TJ=25°C | 2 | ||
| Gate-Emitter Threshold Voltage | V GE(th) | 4.5 | 5.1 | 5.7 | V | VCE=5V, IC=1mA | 2 |
| Zero Gate Voltage Collector Current | I CES | 10 | mA | VCE=650V, VGE=0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Collector Current | I CES | 100 | mA | VCE=650V, VGE=0V, TJ=125°C | 2 | ||
| Zero Gate Voltage Collector Current | I CES | 1000 | mA | VCE=650V, VGE=0V, TJ=175°C | 2 | ||
| Gate-Emitter leakage current | I GES | -100 | 100 | nA | VCE=0V, VGE=±30V | 2 | |
| Collector-Emitter Saturation Voltage | V CE(sat) | 1.6 | 2 | V | VGE=15V, IC=10A, TJ=25°C | 2 | |
| Diode Forward Voltage | VF | 1.9 | 2.4 | V | VGE=0V, IC=10A, TJ=25°C | 2 | |
| Collector-Emitter Voltage | VCE | 650 | V | 1 | |||
| Gate-Emitter Voltage | VGE | -30 | 30 | V | 1 | ||
| Continuous Collector Current | IC | 20 | A | TC=25°C | 1 | ||
| Continuous Collector Current | IC | 10 | A | TC=100°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum IGBT Junction-to-Case | RθJC | 1 | °C/W | 8 | |||
| Maximum Diode Junction-to-Case | RθJC | 3.3 | °C/W | 8 | |||
| Maximum Junction-to-Ambient | RθJA | 65 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
AOB10B65M1 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
aob10b65m1-etched.step/aob10b65m1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aob10b65m1.step/aob10b65m1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (9 pp, sha256
da9fb6e7ab004323, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).