component
PSMN165-200K-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPSMN165-200K-VB
VBsemi Elec · MOSFETs · SO-8
PSMN165-200K-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; continuous source (diode) current is rated 6 A. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source (diode) current is rated 6 A. |
| 3 | S | passive | Source of the N-channel MOSFET; continuous source (diode) current is rated 6 A. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 5 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 200 V and continuous drain current 3 A. |
| 6 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 200 V and continuous drain current 3 A. |
| 7 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 200 V and continuous drain current 3 A. |
| 8 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 200 V and continuous drain current 3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 3 | A | TJ = 175 °C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 6 | A | 1 | |||
| Avalanche Current | IAS | 6 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 18 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 96 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 15 | 18 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 40 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.33 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.292 | Ω | VGS = 6 V, ID = 3 A | 2 | ||
| Forward Transconductance | gfs | 35 | S | VDS = 15 V, ID = 3 A | 2 | ||
| Input Capacitance | Ciss | 1800 | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 8 | nC | VDS = 100 V, VGS = 10 V, ID = 3 A | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS = 100 V, VGS = 10 V, ID = 3 A | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 60 | 90 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Pulsed Current | ISM | 5 | A | TC = 25 °C | 2 | ||
| Diode Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 3 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 180 | 250 | ns | IF = 3 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
PSMN165-200K-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
psmn165-200k-vb-etched.step/psmn165-200k-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);psmn165-200k-vb.step/psmn165-200k-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
8e5232a269b32119, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).