component
WNM3019-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWNM3019-3
WILLSEMI Will Semicon · MOSFETs · SOT-523
WNM3019-3 from WILLSEMI Will Semicon, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with VGS rated ±20V and a typical threshold of 1.0V (0.8V min, 1.5V max at ID=250uA). |
| 2 | S | passive | Source of the N-channel MOSFET, with the body diode running from source to drain and a forward voltage of 0.8V typical at IS=0.25A. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 50V and continuous drain current of 0.25A (TA=25°C, 10 s). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | printed ±20 | 2 | |
| Continuous Drain Current (a) | ID | 0.25 | A | TA=25°C, t ≤ 10 s, board a | 2 | ||
| Continuous Drain Current (a) | ID | 0.23 | A | TA=25°C, steady state, board a | 2 | ||
| Continuous Drain Current (a) | ID | 0.2 | A | TA=70°C, t ≤ 10 s, board a | 2 | ||
| Continuous Drain Current (a) | ID | 0.18 | A | TA=70°C, steady state, board a | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.37 | W | TA=25°C, t ≤ 10 s, board a | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.31 | W | TA=25°C, steady state, board a | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.24 | W | TA=70°C, t ≤ 10 s, board a | 2 | ||
| Maximum Power Dissipation (a) | PD | 0.2 | W | TA=70°C, steady state, board a | 2 | ||
| Continuous Drain Current (b) | ID | 0.22 | A | TA=25°C, t ≤ 10 s, board b | 2 | ||
| Continuous Drain Current (b) | ID | 0.2 | A | TA=25°C, steady state, board b | 2 | ||
| Continuous Drain Current (b) | ID | 0.17 | A | TA=70°C, t ≤ 10 s, board b | 2 | ||
| Continuous Drain Current (b) | ID | 0.16 | A | TA=70°C, steady state, board b | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.28 | W | TA=25°C, t ≤ 10 s, board b | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.23 | W | TA=25°C, steady state, board b | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.18 | W | TA=70°C, t ≤ 10 s, board b | 2 | ||
| Maximum Power Dissipation (b) | PD | 0.15 | W | TA=70°C, steady state, board b | 2 | ||
| Pulsed Drain Current | IDM | 1 | A | pulse width < 380 µs, duty cycle < 2% | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 285 | 335 | °C/W | t ≤ 10 s, board a | 2 | |
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 340 | 405 | °C/W | steady state, board a | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 385 | 450 | °C/W | t ≤ 10 s, board b | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 455 | 545 | °C/W | steady state, board b | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 260 | 300 | °C/W | steady state | 2 | |
| Drain-to-Source Breakdown Voltage | BVDSS | 50 | V | VGS = 0 V, ID = 250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 40 V, VGS = 0 V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -5 | 5 | µA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1 | 1.5 | V | VGS = VDS, ID = 250 µA | 3 |
| Drain-to-Source On-resistance | RDS(on) | 1.2 | 3 | Ω | VGS = 10 V, ID = 0.45 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 1.3 | 4 | Ω | VGS = 4.5 V, ID = 0.25 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 1.4 | 4 | Ω | VGS = 4.0 V, ID = 0.25 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 1.9 | 6 | Ω | VGS = 2.5 V, ID = 0.01 A | 3 | |
| Drain-to-Source On-resistance | RDS(on) | 5.4 | 15 | Ω | VGS = 1.8 V, ID = 0.01 A | 3 | |
| Body Diode Forward Voltage | VSD | 0.8 | 1.5 | V | VGS = 0 V, IS = 0.25 A | 3 | |
| Forward Transconductance | gfs | 0.5 | S | VDS = 15 V, ID = 0.1 A | 3 | ||
| Input Capacitance | CISS | 36 | pF | VGS = 0 V, F = 1.0 MHz, VDS = 5 V | 3 | ||
| Output Capacitance | COSS | 22 | pF | VGS = 0 V, F = 1.0 MHz, VDS = 5 V | 3 | ||
| Reverse Transfer Capacitance | CRSS | 12 | pF | VGS = 0 V, F = 1.0 MHz, VDS = 5 V | 3 | ||
| Total Gate Charge | QG(TOT) | 1.6 | nC | VGS = 10 V, VDD = 30 V, ID = 0.1 A | 3 | ||
| Threshold Gate Charge | QG(TH) | 0.25 | nC | VGS = 10 V, VDD = 30 V, ID = 0.1 A | 3 | ||
| Gate-to-Source Charge | QGS | 0.4 | nC | VGS = 10 V, VDD = 30 V, ID = 0.1 A | 3 | ||
| Gate-to-Drain Charge | QGD | 0.45 | nC | VGS = 10 V, VDD = 30 V, ID = 0.1 A | 3 | ||
| Turn-On Delay Time | td(ON) | 8.6 | ns | VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA | 3 | ||
| Rise Time | tr | 4 | ns | VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA | 3 | ||
| Turn-Off Delay Time | td(OFF) | 23.8 | ns | VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA | 3 | ||
| Fall Time | tf | 14.2 | ns | VGS = 5 V, VDD = 5 V, RL = 500 Ω, RG = 10 Ω, ID = 10 mA | 3 |
CAD (KiCad official)
- Symbol:
WNM3019-3 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
wnm3019-3-etched.step/wnm3019-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wnm3019-3.step/wnm3019-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256
919c2bb9624ec725, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).