component
SLMi350DB-DG
Public Made by Adomby adom
Sillumin Gate Drive ICs, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSLMi350DB-DG
Sillumin · Gate Drive ICs · DIP-8
SLMi350DB-DG from Sillumin, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | No connection. |
| 2 | ANODE | input | Anode of the emulated-diode input; forward current of 7mA to 16mA recommended, set with an external resistor, with 30V reverse voltage handling. |
| 3 | CATHODE | input | Cathode of the emulated-diode input stage; the output is driven high when forward current exceeds IFLH (2.1mA typ). |
| 4 | NC | unconnected | No connection. |
| 5 | GND | power_in | Output-side ground; bypass capacitor to VCC should be placed close between VCC and GND. |
| 6 | VO | output | Gate drive output with 4A source and 7A sink peak current capability. |
| 7 | NC | unconnected | No connection. |
| 8 | VCC | power_in | Positive output-side power supply rail, recommended 14V to 40V (absolute max 45V), with UVLO protection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Sillumin |
| Package | DIP-8 |
| Category | Power Supply Chip |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Average Input Current | IF(AVG) | 25 | mA | 4 | |||
| Reverse Input Voltage | VR | 30 | V | 4 | |||
| Output supply voltage | VCC | 45 | V | 4 | |||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | TS | -55 | 150 | °C | 4 | ||
| Output Supply Voltage | VCC | 14 | 40 | V | 4 | ||
| Input Diode Forward Current (Diode ON) | IF(ON) | 7 | 16 | mA | 4 | ||
| Anode Voltage - Cathode Voltage (Diode OFF) | VF(OFF) | -30 | 0.9 | V | 4 | ||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Ambient temperature | TA | -40 | 125 | °C | 4 | ||
| ESD HBM | VESD | 4000 | V | HBM | 4 | ||
| ESD CDM | VESD | 2000 | V | CDM | 4 | ||
| Input Reverse Breakdown Voltage | VR | 30 | V | IR=10uA | 6 | ||
| High Level Peak Output Current | IOH | 4 | A | VCC=15V, IF=10mA, CVCC=10uF, CLOAD=220nF | 6 | ||
| Low Level Peak Output Current | IOL | 7 | A | VCC=15V, VF=0V, CVCC=10uF, CLOAD=220nF | 6 | ||
| Under Voltage Lockout VCC rising | UVLOR | 11 | 12.5 | 13.5 | V | VCC rising, IF=10mA | 6 |
| Under Voltage Lockout VCC falling | UVLOF | 10 | 11.5 | 12.5 | V | VCC falling, IF=10mA | 6 |
| Propagation delay, Low to High | tPLH | 80 | 120 | ns | CLOAD=1nF, fsw=20kHz, 50% Duty Cycle, VCC=15V | 7 | |
| Propagation delay, High to Low | tPHL | 80 | 120 | ns | CLOAD=1nF, fsw=20kHz, 50% Duty Cycle, VCC=15V | 7 | |
| Pulse Width Distortion | tPWD | 35 | ns | CLOAD=1nF, fsw=20kHz, 50% Duty Cycle, VCC=15V | 7 | ||
| Propagation Delay Difference Between Any Two Parts | tPDD | 25 | ns | CLOAD=1nF, fsw=20kHz, 50% Duty Cycle, VCC=15V | 7 | ||
| UVLO Recovery Delay | tUVLO_REC | 22 | 30 | us | VCC Rising from 0V to 15V | 7 | |
| Output High Level Common Mode Transient Immunity | CMTIH | 150 | 200 | kV/us | IF=10mA, VCM=1000V, VCC=15V, TA=25°C | 7 | |
| Output Low Level Common Mode Transient Immunity | CMTIL | 150 | 200 | kV/us | VF=0V, VCM=1000V, VCC=15V, TA=25°C | 7 | |
| Input Forward Threshold Current Low to High | IFLH | 2.1 | mA | 6 | |||
| Input Forward Voltage | VF | 2.2 | V | IF=10mA | 6 | ||
| Temp Coefficient of Input Forward Voltage | VF/T | 0.5 | mV/°C | IF=10mA | 6 | ||
| High Level Output Voltage | VOH | 30 | mV | IF=10mA, IO=-20mA, with respect to VCC | 6 | ||
| Low Level Output Voltage | VOL | 17 | mV | VF=0V, IO=20mA | 6 | ||
| High Output Transistor RDS | RDS_OH | 1.5 | Ω | 6 | |||
| Low Output Transistor RDS | RDS_OL | 0.85 | Ω | 6 | |||
| Output Supply Current (Diode On) | ICC_H | 1.7 | mA | IF=10mA, IO=0mA | 6 | ||
| Output Supply Current (Diode Off) | ICC_L | 1.4 | mA | VF=0V, IO=0mA | 6 | ||
| Under Voltage Lockout Hysteresis | UVLOHYS | 1 | V | 6 | |||
| Turn on rise time | tr | 8 | ns | CLOAD=1nF, fsw=20kHz, 50% Duty Cycle, VCC=15V | 7 | ||
| Turn off fall time | tf | 6 | ns | CLOAD=1nF, fsw=20kHz, 50% Duty Cycle, VCC=15V | 7 | ||
| Capacitance (Input Side to Output Side) | CIO | 1.6 | pF | 5 | |||
| Input Capacitance | CIN | 30 | pF | 5 |
CAD (KiCad official)
- Symbol:
SLMi350DB-DG - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
slmi350db-dg-etched.step/slmi350db-dg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);slmi350db-dg.step/slmi350db-dg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Sillumin datasheet (13 pp, sha256
fac0337b01712238, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).