component
2SD1782Q
Public Made by Adomby adom
Slkor SLKORMICRO Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2SD1782Q
Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-23
2SD1782Q from Slkor SLKORMICRO Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 5 V and gives emitter-base cutoff current IEBO of 500 nA max at VEB = 4 V. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; the datasheet specifies emitter-base breakdown voltage V(BR)EBO of 5 V min at IE = 50 µA. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the datasheet rates collector current IC at 500 mA, collector-base voltage VCBO at 80 V and collector-emitter voltage VCEO at 80 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (Gain Group Q) | HFE | 120 | 270 | at VCE = 3 V, IC = 100 mA | 2 | ||
| Collector Base Cutoff Current | ICBO | 500 | nA | at VCB = 50V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 500 | nA | at VEB = 4 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 80 | V | at IC = 50 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 80 | V | at IC = 2 mA | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | at IE = 50 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | at IC = 500 mA, IB = 50 mA | 2 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | at IC = 500 mA, IB = 50 mA | 2 | ||
| Collector Base Voltage | VCBO | 80 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 80 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 500 | mA | 1 | |||
| Maximum Power Dissipation | PD | 200 | mW | Ratings at 25℃ ambient temperature | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2SD1782Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sd1782q-etched.step/2sd1782q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1782q.step/2sd1782q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (5 pp, sha256
0f42fe6fdc136b56, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).