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Contents

README

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KCP2920A

KIA Semicon Tech · MOSFETs · TO-220

KCP2920A from KIA Semicon Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET, with a gate-to-source voltage rating of ±20 V (VGSS).
2 Drain passive Drain of the N-channel MOSFET, with a drain-to-source voltage rating of 200 V (VDSS).
3 Source passive Source of the N-channel MOSFET, with an integral body diode rated for 110 A continuous source current.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 200 V VGS=0V, ID=250uA 3
Drain-to-Source Leakage Current IDSS 1 uA VDS=200V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 100 uA VDS=160V,TJ=125°C 3
Gate-to-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Drain-to-Source ON Resistance RDS(ON) 9 10.5 mΩ VGS=10V, ID=35A 3
Gate Threshold Voltage VGS(TH) 2.5 4.5 V VDS=VGS,ID=250uA 3
Continuous Source Current ISD 110 A Integral PN-diode in MOSFET 3
Pulsed Source Current ISM 440 A 3
Forward Voltage VSD 1.2 V IS=70A, VGS=0V 3
Drain-to-Source Voltage VDSS 200 V TJ=+25°C to +150°C (footnote 1) 2
Gate-to-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 130 A Tc=25 ºC 2
Continuous Drain Current ID 75 A Tc=100 ºC 2
Pulsed Drain Current IDM 440 A at VGS=10V (footnote 2, repetitive rating) 2
Single Pulse Avalanche Energy EAS 2000 mJ L=10mH 2
Peak Diode Recovery dv/dt dv/dt 5 V/ns 2
Power Dissipation PD 278 W TC=25 ºC (unless otherwise specified) 2
Derating Factor above 25°C PD 2.22 W/°C above 25°C 2
Maximum Temperature for Soldering, leads at 1.6mm from case for 10 seconds TL 300 ºC 10 seconds 2
Maximum Temperature for Soldering, package body for 10 seconds TPAK 260 ºC 10 seconds 2
Operating and Storage Temperature Range TJ&TSTG -55 150 ºC 2
Thermal Resistance, Junction-to-Case (TO-263, TO-220 column) RθJC 0.45 ºC/W 2
Thermal Resistance, Junction-to-Ambient (TO-263, TO-220 column) RθJA 62 ºC/W 2

CAD (KiCad official)

  • Symbol: KCP2920A
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: kcp2920a-etched.step / kcp2920a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kcp2920a.step / kcp2920a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (7 pp, sha256 2b94e79f48f3eaf4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF