component
KCP2920A
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKCP2920A
KIA Semicon Tech · MOSFETs · TO-220
KCP2920A from KIA Semicon Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, with a gate-to-source voltage rating of ±20 V (VGSS). |
| 2 | Drain | passive | Drain of the N-channel MOSFET, with a drain-to-source voltage rating of 200 V (VDSS). |
| 3 | Source | passive | Source of the N-channel MOSFET, with an integral body diode rated for 110 A continuous source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=200V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | uA | VDS=160V,TJ=125°C | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Drain-to-Source ON Resistance | RDS(ON) | 9 | 10.5 | mΩ | VGS=10V, ID=35A | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS,ID=250uA | 3 | |
| Continuous Source Current | ISD | 110 | A | Integral PN-diode in MOSFET | 3 | ||
| Pulsed Source Current | ISM | 440 | A | 3 | |||
| Forward Voltage | VSD | 1.2 | V | IS=70A, VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 200 | V | TJ=+25°C to +150°C (footnote 1) | 2 | ||
| Gate-to-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 130 | A | Tc=25 ºC | 2 | ||
| Continuous Drain Current | ID | 75 | A | Tc=100 ºC | 2 | ||
| Pulsed Drain Current | IDM | 440 | A | at VGS=10V (footnote 2, repetitive rating) | 2 | ||
| Single Pulse Avalanche Energy | EAS | 2000 | mJ | L=10mH | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 2 | |||
| Power Dissipation | PD | 278 | W | TC=25 ºC (unless otherwise specified) | 2 | ||
| Derating Factor above 25°C | PD | 2.22 | W/°C | above 25°C | 2 | ||
| Maximum Temperature for Soldering, leads at 1.6mm from case for 10 seconds | TL | 300 | ºC | 10 seconds | 2 | ||
| Maximum Temperature for Soldering, package body for 10 seconds | TPAK | 260 | ºC | 10 seconds | 2 | ||
| Operating and Storage Temperature Range | TJ&TSTG | -55 | 150 | ºC | 2 | ||
| Thermal Resistance, Junction-to-Case (TO-263, TO-220 column) | RθJC | 0.45 | ºC/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient (TO-263, TO-220 column) | RθJA | 62 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KCP2920A - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
kcp2920a-etched.step/kcp2920a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kcp2920a.step/kcp2920a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (7 pp, sha256
2b94e79f48f3eaf4, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).