component
NSV2SA2029M3T5G
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNSV2SA2029M3T5G
onsemi · Bipolar Transistors - BJT · SOT-723
NSV2SA2029M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base of the PNP transistor; the datasheet gives VEBO of −6.0 Vdc maximum for the emitter-base junction. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is −6.0 Vdc minimum. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; the datasheet rates VCBO at −60 Vdc, VCEO at −50 Vdc and continuous IC at −100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | Vdc | IC = -50 Adc, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -50 | Vdc | IC = -1.0 mAdc, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -6 | Vdc | IE = -50 Adc, IE = 0 | 2 | ||
| Collector-Base Cutoff Current | ICBO | -0.5 | nA | VCB = -30 Vdc, IE = 0 | 2 | ||
| Emitter-Base Cutoff Current | IEBO | -0.1 | A | VEB = -7.0 Vdc, IB = 0 | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | Vdc | IC = -50 mAdc, IB = -5.0 mAdc | 2 | ||
| DC Current Gain | hFE | 120 | 560 | VCE = -6.0 Vdc, IC = -1.0 mAdc | 2 | ||
| Transition Frequency | fT | 140 | MHz | VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz | 2 | ||
| Output Capacitance | COB | 3.5 | pF | VCB = -12 Vdc, IE = 0 Adc, f = 1.0 MHz | 2 | ||
| Collector-Base Voltage | V(BR)CBO | -60 | Vdc | TA = 25°C | 1 | ||
| Collector-Emitter Voltage | V(BR)CEO | -50 | Vdc | TA = 25°C | 1 | ||
| Emitter-Base Voltage | V(BR)EBO | -6 | Vdc | TA = 25°C | 1 | ||
| Collector Current - Continuous | IC | -100 | mAdc | TA = 25°C | 1 | ||
| Power Dissipation | PD | 265 | mW | Note 1: FR-4 glass epoxy PCB, minimum recommended footprint | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
NSV2SA2029M3T5G - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
nsv2sa2029m3t5g-etched.step/nsv2sa2029m3t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsv2sa2029m3t5g.step/nsv2sa2029m3t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
2f456dfc1f1c8e9c, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).