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SI3911DV-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI3911DV-T1-GE3-VB
VBsemi Elec · MOSFETs · TSOP-6
SI3911DV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of P-channel MOSFET 1; VGS rated ±12 V, threshold -0.5 to -2.0 V. |
| 2 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rated -20 V. |
| 3 | G2 | input | Gate of P-channel MOSFET 2; VGS rated ±12 V, threshold -0.5 to -2.0 V. |
| 4 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current -4.0 A at TC = 25 °C, pulsed -12 A. |
| 5 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rated -20 V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current -4.0 A at TC = 25 °C, pulsed -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -3.6 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current | ID | -3.1 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -1.17 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -0.95 | A | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.14 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 0.73 | W | TA = 70 °C (notes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 93 | 110 | °C/W | t ≤ 5 s (notes b, d) | 1 | |
| Maximum Junction-to-Foot Steady State | RthJF | 75 | 90 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Ambient steady state | RthJA | 150 | °C/W | steady state (note d) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = -20 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -8 | A | VDS - 5 V, VGS = - 4.5V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.075 | Ω | VGS = - 4.5V, ID = - 2.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.1 | Ω | VGS = - 2.5 V, ID = - 1 A | 2 | ||
| Gate Resistance | Rg | 2 | 7 | 14 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 39 | 59 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 25 | 38 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 13 | 20 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 14 | 21 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 7 | 14 | ns | VDD = - 10 V, RL = 7.1, ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Total Gate Charge | Qg | 5.2 | 8 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 2.6 A | 2 | |
| Total Gate Charge | Qg | 2.7 | 4 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 2.6 A | 2 | |
| Body Diode Voltage | VSD | 0.85 | 1.2 | V | IS = - 2.1 A, VGS 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 13 | 20 | ns | IF = - 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 6 | 12 | nC | IF = - 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI3911DV-T1-GE3-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3911dv-t1-ge3-vb-etched.step/si3911dv-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3911dv-t1-ge3-vb.step/si3911dv-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
fb354ef51e18c877, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).