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Contents

README

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MS0005B

miracle · MOSFETs · TO-263

MS0005B from miracle, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20V with a threshold of 2.0 to 4.0V at ID = 250μA.
2 D passive Drain terminal, also the package tab; rated 100V drain-source and 260A continuous at TC = 25°C.
3 S passive Source terminal; carries up to 260A continuous at TC = 25°C, with RDS(on) typically 1.6mΩ at VGS = 10V.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 1.6 2 mΩ VGS = 10V, ID = 20A 2
Drain-Source Diode Forward Continuous Current IS 260 A VG = VD = 0V, Force Current 2
Maximum Pulsed Current ISM 1040 A VG = VD = 0V, Force Current 2
Drain-Source Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 2
Drain-Source Voltage VDS 100 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 260 A TC = 25°C 1
Drain Current-Continuous ID 164 A TC = 100°C 1
Drain Current-Pulsed IDM 1040 A Repetitive rating: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 284 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 1849 mJ L = 0.5mH, VDD = 30V, IAS = 86A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.44 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 37 °C/W 1
Gate Resistance RG 2.4 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 12.63 nF VDS = 60V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 2099 pF VDS = 60V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 269 pF VDS = 60V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 40 ns VDD = 20V, VGS = 10V, RL = 1.0Ω, RGEN = 3.0Ω 2
Turn-On Rise Time tr 67 ns VDD = 20V, VGS = 10V, RL = 1.0Ω, RGEN = 3.0Ω 2
Turn-Off Delay Time td(off) 131 ns VDD = 20V, VGS = 10V, RL = 1.0Ω, RGEN = 3.0Ω 2
Turn-Off Fall Time tf 91 ns VDD = 20V, VGS = 10V, RL = 1.0Ω, RGEN = 3.0Ω 2
Total Gate Charge Qg 230 nC VDS = 20V, VGS = 0 to 10V, ID = 20A 2
Gate-Source Charge Qgs 56 nC VDS = 20V, VGS = 0 to 10V, ID = 20A 2
Gate-Drain Charge Qgd 76 nC VDS = 20V, VGS = 0 to 10V, ID = 20A 2
Body Diode Reverse Recovery Time Trr 113 ns IF = 15A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 274 nC IF = 15A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MS0005B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ms0005b-etched.step / ms0005b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms0005b.step / ms0005b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 6dcf4c5d3c8de4d0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF