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RUU002N05T106

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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RUU002N05T106

ROHM Semicon · MOSFETs · SOT-323

RUU002N05T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SOURCE passive Source terminal of the N-channel MOSFET, with a body diode from source to drain; continuous source current IS is limited to 150 mA and pulsed ISP to 800 mA.
2 GATE input Gate terminal for 1.2 V drive, with gate-source voltage VGSS rated at 8 V maximum and an ESD protection diode shown in the inner circuit.
3 DRAIN passive Drain terminal with drain-source voltage VDSS rated at 50 V, continuous drain current ID of 200 mA and pulsed IDP of 800 mA (Pw 10 s, duty cycle 1%).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 50 V ID=1mA, VGS=0V 2
Gate threshold voltage VGS (th) 0.3 1 V VDS=10V, ID=1mA 2
Forward transfer admittance /Yfs/ 0.4 S ID=200mA, VDS=10V 2
Gate-source leakage IGSS 10 A VGS=8V, VDS=0V 2
Zero gate voltage drain current IDSS 1 A VDS=50V, VGS=0V 2
Static drain-source on-state resistance RDS(on) 1.6 2.2 ID=200mA, VGS=4.5V 2
Static drain-source on-state resistance RDS(on) 1.7 2.4 ID=200mA, VGS=2.5V 2
Static drain-source on-state resistance RDS(on) 1.9 2.7 ID=100mA, VGS=1.8V 2
Static drain-source on-state resistance RDS(on) 2 4 ID=40mA, VGS=1.5V 2
Static drain-source on-state resistance RDS(on) 2.4 7.2 ID=20mA, VGS=1.2V 2
Forward voltage VSD 1.2 V Is=200mA, VGS=0V 2
Drain-source voltage VDSS 50 V Ta=25C 1
Gate-source voltage VGSS 8 V Ta=25C 1
Continuous drain current ID 200 mA Ta=25C 1
Pulsed drain current IDP 800 mA Pw10s, Duty cycle1% 1
Continuous source current (body diode) IS 150 mA Ta=25C 1
Pulsed source current (body diode) ISP 800 mA Pw10s, Duty cycle1% 1
Power dissipation PD 200 mW Each terminal mounted on a recommended land 1
Channel temperature Tch 150 C 1
Range of storage temperature Tstg -55 150 C 1
Channel to ambient thermal resistance Rth (ch-a) 625 C / W Each terminal mounted on a recommended land 1

CAD (KiCad official)

  • Symbol: RUU002N05T106
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: ruu002n05t106-etched.step / ruu002n05t106-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ruu002n05t106.step / ruu002n05t106.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (6 pp, sha256 48b0af10391ac6c1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF