component
4430
Public Made by Adomby adom
HL MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4430
HL · MOSFETs · SOP-8
4430 from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, connected internally with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, connected internally with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, connected internally with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, with VGS rated ±20 V maximum. |
| 5 | D | passive | Drain of the N-channel MOSFET (VDS 30 V max), connected internally with pins 6-8. |
| 6 | D | passive | Drain of the N-channel MOSFET (VDS 30 V max), connected internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET (VDS 30 V max), connected internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET (VDS 30 V max), connected internally with pins 5-7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 4.6 | 6 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 6.1 | 8.6 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Continuous Drain to Source Diode Forward Current | IS | 20 | A | 2 | |||
| Pulsed Drain to Source Diode Forward Current | ISM | 80 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 25 | A | @T=25℃, VGS@10V | 1 | ||
| Continuous Drain Current | ID | 15 | A | @T=70℃, VGS@10V | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 105.8 | mJ | 1 | |||
| Avalanche Current | IAS | 51 | A | 1 | |||
| Total Power Dissipation | PD | 10 | W | @T=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 35 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
4430 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
4430-etched.step/4430-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4430.step/4430.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
a2486bd207330174, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).