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MMDT3904_R1_00001

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PANJIT International Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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MMDT3904_R1_00001

PANJIT International · Bipolar (BJT) · SOT-363

MMDT3904_R1_00001 from PANJIT International, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN); VEBO max 6.0 V, IC max 200 mA per transistor.
2 B1 passive Base of transistor 1 (NPN); VEBO max 6.0 V and VCBO 60 V.
3 C2 passive Collector of transistor 2 (NPN); VCEO 40 V, VCBO 60 V, continuous IC 200 mA.
4 E2 passive Emitter of transistor 2 (NPN); VEBO max 6.0 V, IC max 200 mA per transistor.
5 B2 passive Base of transistor 2 (NPN); VEBO max 6.0 V and VCBO 60 V.
6 C1 passive Collector of transistor 1 (NPN); VCEO 40 V, VCBO 60 V, continuous IC 200 mA.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Breakdown Voltage V(BR)CEO 40 V IC=1.0mA, IB=0 2
Collector - Base Breakdown Voltage V(BR)CBO 60 V IC=10uA, IE=0 2
Emitter - Base Breakdown Voltage V(BR)EBO 6 V IE=10uA, IC=0 2
Base Cutoff Current IB 50 nA VCE=30V, VEB=3.0V 2
Collector Cutoff Current ICEX 50 nA VCE=30V, VEB=3.0V 2
DC Current Gain hFE 40 IC=0.1mA, VCE=1.0V 2
DC Current Gain hFE 70 IC=1.0mA, VCE=1.0V 2
DC Current Gain hFE 100 IC=10mA, VCE=1.0V 2
DC Current Gain hFE 60 IC=50mA, VCE=1.0V 2
DC Current Gain hFE 30 IC=100mA, VCE=1.0V 2
DC Current Gain (max, row link not explicit in text) hFE 300 2
Collector - Emitter Saturation Voltage VCE(SAT) 0.2 V IC=10mA, IB=1.0mA 2
Collector - Emitter Saturation Voltage VCE(SAT) 0.3 V IC=50mA, IB=5.0mA 2
Base - Emitter Saturation Voltage VBE(SAT) 0.65 0.85 V IC=10mA, IB=1.0mA 2
Base - Emitter Saturation Voltage VBE(SAT) 0.95 V IC=50mA, IB=5.0mA 2
Collector - Base Capacitance CCBO 4 pF VCB=5V, IE=0, f=1MHz 2
Emitter - Base Capacitance CEBO 8 pF VCB=0.5V, IC=0, f=1MHz 2
Delay Time td 35 ns VCC=3V, VBE=-0.5V, IC=10mA, IB=1.0mA 2
Rise Time tr 35 ns VCC=3V, VBE=-0.5V, IC=10mA, IB=1.0mA 2
Storage Time ts 200 ns VCC=3V, IC=10mA, IB1=IB2=1.0mA 2
Fall Time tf 50 ns VCC=3V, IC=10mA, IB1=IB2=1.0mA 2
Collector - Emitter Voltage VCEO 40 V 1
Collector - Base Voltage VCBO 60 V 1
Emitter - Base Voltage VEBO 6 V 1
Collector Current - Continuous IC 200 mA 1
Junction Temperature TJ -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Max Power Dissipation (Note 1) PTOT 225 mW Transistor mounted on FR-4 board 70 x 60 x 1mm 1
Thermal Resistance, Junction to Ambient RθJA 625 °C/W 1

CAD (KiCad official)

  • Symbol: MMDT3904_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt3904-r1-00001-etched.step / mmdt3904-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3904-r1-00001.step / mmdt3904-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (6 pp, sha256 d84bb1edfbc7ea64, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF