component
AO4618-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAO4618-JSM
JSMSEMI · MOSFETs · SOP-8
AO4618-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS=40V, ID=8A, RDS(ON)<22mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS=-40V, ID=-6A, RDS(ON)<53mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20V). |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 6 (VDS=-40V, ID=-6A). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5 (VDS=-40V, ID=-6A). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 8 (VDS=40V, ID=8A). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7 (VDS=40V, ID=8A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -40 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 8 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -6 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.2 | A | TA=100℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -3.9 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 32 | A | note1: pulse width limited by maximum junction temperature | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -24 | A | note1: pulse width limited by maximum junction temperature | 1 | ||
| Single Pulsed Avalanche Energy (N-Channel) | EAS | 13 | mJ | note2: TJ=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω, IAS=7.2A | 1 | ||
| Single Pulsed Avalanche Energy (P-Channel) | EAS | 17.6 | mJ | note2: TJ=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω, IAS=-8.4A | 1 | ||
| Power Dissipation (N-Channel) | PD | 2 | W | TA=25℃ | 1 | ||
| Power Dissipation (P-Channel) | PD | 3.2 | W | TA=25℃ | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Ambient (N-Channel) | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient (P-Channel) | RθJA | 39 | ℃/W | 1 | |||
| Source-Drain Diode Forward Voltage (N-Channel) | VSD | 1.2 | V | VGS=0V,IS=8A | 2 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 40 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | μA | VGS=0V, VDS=40V | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance (N-Channel) | RDS(ON) | 17 | 22 | mΩ | VGS=10V,ID=8A | 2 | |
| Drain-Source On Resistance (N-Channel) | RDS(ON) | 25 | 35 | mΩ | VGS=4.5V,ID=5A | 2 | |
| Continuous Drain to Source Diode Current (N-Channel) | IS | 8 | A | 2 | |||
| Pulsed Drain to Source Diode Current (N-Channel) | ISM | 32 | A | 2 | |||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -40 | V | VGS=0V,ID=250μA | 5 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | μA | VGS=0V, VDS=-40V | 5 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 5 | |
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=250μA | 5 |
| Drain-Source On Resistance (P-Channel) | RDS(ON) | 41 | 53 | mΩ | VGS=-10V,ID=-6A | 5 | |
| Drain-Source On Resistance (P-Channel) | RDS(ON) | 58 | 81 | mΩ | VGS=-4.5V,ID=-4A | 5 | |
| Continuous Drain to Source Diode Current (P-Channel) | IS | -6 | A | 5 | |||
| Pulsed Drain to Source Diode Current (P-Channel) | ISM | -24 | A | 5 | |||
| Source-Drain Diode Forward Voltage (P-Channel) | VSD | -1.2 | V | VGS=0V,IS=-6A | 5 |
CAD (KiCad official)
- Symbol:
AO4618-JSM - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4618-jsm-etched.step/ao4618-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4618-jsm.step/ao4618-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (8 pp, sha256
f1d364e0151048c7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).