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Contents

README

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WSD6040DN56

Winsok Semicon · MOSFETs · DFN-8-EP(6.1x5.2)

WSD6040DN56 from Winsok Semicon, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pins 1, 2 and 3 are tied together; the datasheet shows them as the source terminal.
2 S passive Source of the N-channel MOSFET, pins 1, 2 and 3 are tied together; the datasheet shows them as the source terminal.
3 S passive Source of the N-channel MOSFET, pins 1, 2 and 3 are tied together; the datasheet shows them as the source terminal.
4 G input Gate of the N-channel MOSFET, rated for VGS of ±20 V with a typical threshold of 1.6 V.
5 D passive Drain of the N-channel MOSFET, pins 5 to 8 are tied together; VDS is rated at 60 V.
6 D passive Drain of the N-channel MOSFET, pins 5 to 8 are tied together; VDS is rated at 60 V.
7 D passive Drain of the N-channel MOSFET, pins 5 to 8 are tied together; VDS is rated at 60 V.
8 D passive Drain of the N-channel MOSFET, pins 5 to 8 are tied together; VDS is rated at 60 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package DFN-8-EP(6.1x5.2)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(TH) 1 1.6 2.5 V VGS = VDS, IDS = 250µA 2
Gate Leakage Current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 48 V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 30 µA VDS = 48 V, VGS = 0V, TJ=85°C 2
Drain-Source On-state Resistance RDS(on) 14 17.5 mΩ VGS = 10V, ID = 25A 2
Drain-Source On-state Resistance RDS(on) 19 22 mΩ VGS = 4.5V, ID = 20A 2
Diode Forward Voltage VSD 0.8 1.3 V ISD = 20A, VGS=0V 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 36 A TC=25°C 1
Continuous Drain Current ID 22 A TC=100°C 1
Continuous Drain Current ID 8.4 A TA=25°C 1
Continuous Drain Current ID 6.8 A TA=100°C 1
Pulsed Drain Current IDM 140 A 1
Avalanche Current IAS 16 A Single pulse L=0.5mH 1
Single Pulse Avalanche Energy EAS 64 mJ Single pulse L=0.5mH 1
Diode Continuous Forward Current IS 18 A 1
Maximum Power Dissipation PD 37.8 W TC=25°C 1
Maximum Power Dissipation PD 15.1 W TC=100°C 1
Maximum Power Dissipation PD 2.08 W TA=25°C 1
Maximum Power Dissipation PD 1.33 W TA=70°C 1
Maximum Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Thermal Resistance Junction to Ambient RθJA 60 ℃/W Steady state; surface mounted on 1in² pad area 1
Thermal Resistance Junction to Case RθJC 3.3 ℃/W Steady state 1

CAD (KiCad official)

  • Symbol: WSD6040DN56
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
  • 3D model files: wsd6040dn56-etched.step / wsd6040dn56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsd6040dn56.step / wsd6040dn56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 338ffdd02eb6a03e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF