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Contents

README

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BFU530A

NXP Semicon · Bipolar (BJT) · SOT-23-3

BFU530A from NXP Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor (Table 2 lists it as 'base'); the datasheet gives no pin-specific electrical limit for this lead.
2 E passive Emitter terminal of the NPN transistor (Table 2 lists it as 'emitter'); the datasheet gives no pin-specific electrical limit for this lead.
3 C passive Collector terminal of the NPN transistor (Table 2 lists it as 'collector'); Tsp is defined at the solder point of this lead, and the datasheet gives no pin-specific electrical limit for it.

Key specifications

Parameter Value
Manufacturer NXP Semicon
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCB 30 V open emitter 3
collector-emitter voltage VCE 16 V open base 3
collector-emitter voltage VCE 30 V shorted base 3
emitter-base voltage VEB 3 V open collector 3
collector current IC 65 mA 3
storage temperature Tstg -65 150 C 3
electrostatic discharge voltage, Human Body Model VESD 150 V HBM according to JEDEC standard 22-A114E 3
electrostatic discharge voltage, Charged Device Model VESD 2 kV CDM according to JEDEC standard 22-C101B 3
collector-base voltage VCB 24 V open emitter 3
collector-emitter voltage VCE 12 V open base 3
collector-emitter voltage VCE 24 V shorted base 3
emitter-base voltage VEB 2 V open collector 3
collector current IC 40 mA 3
input power Pi 10 dBm ZS = 50 3
junction temperature Tj -40 150 C 3
total power dissipation Ptot 450 mW Tsp <= 87 C [1] 3
collector-base breakdown voltage V(BR)CBO 24 V IC = 100 nA; IE = 0 mA 4
collector-emitter breakdown voltage V(BR)CEO 12 V IC = 150 nA; IB = 0 mA 4
collector current IC 10 40 mA 4
DC current gain hFE 60 95 200 IC = 10 mA; VCE = 8 V 4
thermal resistance from junction to solder point Rth(j-sp) 140 K/W 4

CAD (KiCad official)

  • Symbol: BFU530A
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: bfu530a-etched.step / bfu530a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfu530a.step / bfu530a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NXP Semicon datasheet (22 pp, sha256 2063428cceb27358, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF