component
YJD60N02A
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Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownYJD60N02A
Yangzhou Yangjie Elec Tech · MOSFETs · TO-252
YJD60N02A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V absolute maximum, with VGS(th) 0.4 to 1.0 V at ID=250 µA. |
| 2 | D | passive | Drain (center lead stub and exposed metal tab used for heat dissipation); VDS 20 V max, ID 60 A at TC=25℃, pulsed IDM 210 A. |
| 3 | S | passive | Source; body-diode continuous current IS 60 A max, forward voltage VSD 1.2 V max at IS=20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 20 | V | 1 | |||
| Gate-source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current | ID | 60 | A | TC=25℃ | 1 | ||
| Drain Current | ID | 42 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 210 | A | 1 | |||
| Total Power Dissipation | PD | 35 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 18 | W | TC=100℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 195 | mJ | Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω (note B) | 1 | ||
| Thermal Resistance Junction-to-Case | RθJC | 4.3 | ℃/ W | note C: RθJC guaranteed by design | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.62 | 1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | 6 | mΩ | VGS= 4.5V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.5 | 8.8 | mΩ | VGS= 2.5V, ID=15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 14 | mΩ | VGS= 1.8V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=20A,VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 60 | A | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
CAD (KiCad official)
- Symbol:
YJD60N02A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yjd60n02a-etched.step/yjd60n02a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjd60n02a.step/yjd60n02a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
95a7aa0a782a8b8a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).