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RJP020N06T100

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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RJP020N06T100

ROHM Semicon · MOSFETs · SOT-89

RJP020N06T100 from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with ESD protection diode to source; gate-source voltage limited to ±12V (2.5V drive, VGS(th) 0.8 to 1.5V).
2 Drain passive Drain terminal; drain-source voltage up to 60V, continuous drain current 2.0A and pulsed 8.0A.
3 Source passive Source terminal; body diode source current is 2.0A continuous and 8.0A pulsed.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source leakage IGSS 10 µA VGS=±12V, VDS=0V 2
Drain-source breakdown voltage V(BR)DSS 60 V ID=1mA, VGS=0V 2
Zero gate voltage drain current IDSS 1 µA VDS=60V, VGS=0V 2
Gate threshold voltage VGS(th) 0.8 1.5 V VDS=10V, ID=1mA 2
Static drain-source on-state resistance RDS(on) 165 240 mΩ ID=2A, VGS=4.5V 2
Static drain-source on-state resistance RDS(on) 170 250 mΩ ID=2A, VGS=4V 2
Static drain-source on-state resistance RDS(on) 210 300 mΩ ID=2A, VGS=2.5V 2
Forward transfer admittance Yfs 1.5 S VDS=10V, ID=2A 2
Forward voltage (body diode) VSD 1.2 V IS=2A, VGS=0V 2
Drain-source voltage VDSS 60 V Ta=25°C 1
Gate-source voltage VGSS -12 12 V Ta=25°C 1
Drain current continuous ID -2 2 A Ta=25°C 1
Drain current pulsed IDP -8 8 A Pw≤10µs, Duty cycle≤1% 1
Source current continuous (body diode) IS 2 A Ta=25°C 1
Source current pulsed (body diode) ISP 8 A Pw≤10µs, Duty cycle≤1% 1
Total power dissipation PD 500 mW Ta=25°C 1
Total power dissipation PD 2 W When mounted on a 40×40×0.7mm ceramic board 1
Channel temperature Tch 150 °C 1
Range of storage temperature Tstg -55 150 °C 1
Thermal resistance channel to ambient Rth(ch-a) 250 °C/W 1
Thermal resistance channel to ambient Rth(ch-a) 62.5 °C/W When mounted on a 40×40×0.7mm ceramic board 1
Input capacitance Ciss 160 pF VDS=10V, VGS=0V, f=1MHz 2
Output capacitance Coss 50 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse transfer capacitance Crss 8 pF VDS=10V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: RJP020N06T100
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: rjp020n06t100-etched.step / rjp020n06t100-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rjp020n06t100.step / rjp020n06t100.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (5 pp, sha256 c95b89266cc26a48, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF