IRF9388PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the P-channel MOSFET, one of three paralleled source pins on the pin-1 side of the SOP-8 package.
2	S	passive	Source of the P-channel MOSFET, one of three paralleled source pins on the pin-1 side of the SOP-8 package.
3	S	passive	Source of the P-channel MOSFET, one of three paralleled source pins on the pin-1 side of the SOP-8 package.
4	G	input	Gate of the P-channel MOSFET, with VGS rated ±20 V and a threshold of -1.2 V to -2.5 V.
5	D	passive	Drain of the P-channel MOSFET, one of four paralleled drain pins, with VDS rated -30 V.
6	D	passive	Drain of the P-channel MOSFET, one of four paralleled drain pins, with VDS rated -30 V.
7	D	passive	Drain of the P-channel MOSFET, one of four paralleled drain pins, with VDS rated -30 V.
8	D	passive	Drain of the P-channel MOSFET, one of four paralleled drain pins, with VDS rated -30 V.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	SOP-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	-30			V	VGS=0V, ID=-250uA	2
Static Drain-Source On-Resistance	RDS(ON)		5.8	8.7	mΩ	VGS=-10V, ID=-12A	2
Static Drain-Source On-Resistance	RDS(ON)		8.5	13.5	mΩ	VGS=-4.5V, ID=-10A	2
Gate Threshold Voltage	VGS(th)	-1.2		-2.5	V	VGS=VDS, ID=-250uA	2
Drain-Source Leakage Current	IDSS			-1	uA	VDS=-24V, VGS=0V, TJ=25℃	2
Drain-Source Leakage Current	IDSS			-5	uA	VDS=-24V, VGS=0V, TJ=55℃	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V, VDS=0V	2
Continuous Source Current	IS			-14	A	VG=VD=0V, Force Current	2
Pulsed Source Current	ISM			-56	A		2
Diode Forward Voltage	VSD			-1.2	V	VGS=0V, IS=-1A, TJ=25℃	2
Drain-Source Voltage	VDS			-30	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID@TA=25℃			-15	A	VGS @ -10V	1
Continuous Drain Current	ID@TA=70℃			-11	A	VGS @ -10V	1
Pulsed Drain Current	IDM			-56	A		1
Single Pulse Avalanche Energy	EAS			151	mJ		1
Avalanche Current	IAS			-55	A		1
Total Power Dissipation	PD@TA=25℃			1.5	W		1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-Ambient	RθJA			40	℃/W	t≦10s, surface mounted on 1 inch² FR-4 board with 2OZ copper	1
Thermal Resistance Junction-Ambient	RθJA			75	℃/W	Steady state, surface mounted on 1 inch² FR-4 board with 2OZ copper	1
Thermal Resistance Junction-Case	RθJC			24	℃/W		1

CAD (KiCad official)

Symbol: IRF9388PBF-HXY
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: irf9388pbf-hxy-etched.step / irf9388pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9388pbf-hxy.step / irf9388pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (6 pp, sha256 dced90e8301bb29b, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IRF9388PBF-HXY

Verified IRF9388PBF-HXY

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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