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HCSD18563Q5A
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8L(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHCSD18563Q5A
HXY MOSFET · MOSFETs · DFN-8L(5x6)
HCSD18563Q5A from HXY MOSFET, in a DFN-8L(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, with continuous drain current up to 80 A at TC=25°C shared across the source pins. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with continuous drain current up to 80 A at TC=25°C shared across the source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with continuous drain current up to 80 A at TC=25°C shared across the source pins. |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V and a typical threshold of 3 V (2 V min, 4 V max) at ID=250 µA. |
| 5 | D | passive | Drain terminal rated for VDS of 60 V, with RDS(on) below 7 mΩ at VGS=10 V. |
| 6 | D | passive | Drain terminal rated for VDS of 60 V, with RDS(on) below 7 mΩ at VGS=10 V. |
| 7 | D | passive | Drain terminal rated for VDS of 60 V, with RDS(on) below 7 mΩ at VGS=10 V. |
| 8 | D | passive | Drain terminal rated for VDS of 60 V, with RDS(on) below 7 mΩ at VGS=10 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8L(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 5.3 | 7 | mΩ | VGS=10V, ID=30A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 80 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 320 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 80 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 52 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 169 | mJ | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 108 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.4 | ℃/W | 1 | |||
| Input Capacitance | Ciss | 4136 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 286 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 257 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 90 | nC | VDS=30V, ID=30A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 9 | nC | VDS=30V, ID=30A, VGS=10V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 18 | nC | VDS=30V, ID=30A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 9 | ns | VDS=30V, ID=30A, RG=1.8Ω, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 7 | ns | VDS=30V, ID=30A, RG=1.8Ω, VGS=10V | 2 | ||
| Turn-off Delay Time | td(off) | 40 | ns | VDS=30V, ID=30A, RG=1.8Ω, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 15 | ns | VDS=30V, ID=30A, RG=1.8Ω, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 33 | ns | IF=30A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 46 | nC | IF=30A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
HCSD18563Q5A - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8L(5x6) (KiCad packages3D, STEP)
- 3D model files:
hcsd18563q5a-etched.step/hcsd18563q5a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hcsd18563q5a.step/hcsd18563q5a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
3dc005e2933e7fd7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).