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FDD5353-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD5353-VB
VBsemi Elec · MOSFETs · TO-252
FDD5353-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal of the 60 V N-channel MOSFET (VDS minimum breakdown 60 V at VGS = 0 V, ID = 250 µA), with the junction rated to 175 °C. |
| 3 | S | passive | Source terminal; continuous source (diode conduction) current IS is 50 A (package limited) and pulsed current ISM is 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 50 | A | Package limited (note a) | 1 | ||
| Avalanche Current | IAS | 50 | A | 1 | |||
| Single Avalanche Energy | EAS | 125 | mJ | L = 0.1 mH, Duty Cycle ≤ 1 % | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient, steady state | RthJA | 40 | 50 | °C/W | Steady state; surface mounted on 1in x 1in FR4 board (note b) | 1 | |
| Maximum Junction-to-Ambient, t ≤ 10 s | RthJA | 15 | 18 | °C/W | t ≤ 10 s (note c); surface mounted on 1in x 1in FR4 board (note b) | 1 | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.016 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.02 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = 4.5 V, ID = 15 A | 2 | ||
| Total Gate Charge | Qg | 47 | 70 | nC | VDS = 30 V, VGS = 10 V, ID = 50 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 15 | 25 | ns | VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 50 | ns | VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 20 | 30 | ns | VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Pulsed Current | ISM | 60 | A | 2 | |||
| Reverse Recovery Time | trr | 45 | 100 | ns | IF = 20 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
FDD5353-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd5353-vb-etched.step/fdd5353-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd5353-vb.step/fdd5353-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
981d4d473d2bf033, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).